SDC04_01 SANKEN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
IC -VCE Characteristics (Typical) h FE -IC Characteristics (Typical) h FE -IC Temperature Characteristics (Typical) VCE (sat)-IC Temperature Characteristics (Typical) V CE (sat)-IB Characteristics (Typical) I C -VBE Temperature Characteristics (Typical) θ j-a-PW Characteristics P T-Ta Characteristics Safe Operating Area (SOA) SDC04 (Ta=25°C) Symbol Ratings Unit VCBO 100±15 V VCEO 100±15 V VEBO 6V IC 1.5 A ICP 2.5 (PW≤1ms, Du≤10%) A IB 0.1 A PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C θ j–a 41.6 °C/W (Ta=25°C) Symbol Unit Conditions ICBO 10 µAV CB =85V IEBO 13 m A V EB =6V VCEO 85 100 115 V I C =10mA hFE 2000 5000 12000 V CE =4V, IC =1A VCE (sat) 1.0 1.3 V VBE (sat) 1.7 2.2 V VFEC 1.2 1.8 V I FEC =1A ton 0.6 µsV CC 30V, tstg 3.0 µsI C =1A, tf 1.0 µsI B1=–IB2=2mA fT 30 MHz V CE =12V, IE=–0.1A C ob 20 pF V CB =10V, f=1MHz IC =1A, IB=2mA Specification min typ max 2.5 2.0 1.5 1.0 0.5 012345 6 IC (A) VCE (V) IB=5mA 1mA 0.5mA 0.3mA 0.2mA 20000 10000 5000 1000 500 100 (VCE =4V) typ hFE IC (A) 20000 10000 5000 1000 500 100 hFE IC (A) (VCE =4V) Ta=125 75°C 25°C –30°C 0.3 0.5 1 2.5 VCE (sat) (V) IC (A) (IC / IB=1000) Ta=125°C 75°C 25°C –30°C 0.1 0.5 1 5 10 50 100 VCE (sat) (V) IB (mA) IC =4A IC =2A IC -1A 2.5 2.0 1.5 1.0 0.5 0123 VBE (V) (VCE =4V) IC (A) T a=125°C 25°C –30 1 5 10 50 100 500 1000 θ j–a (°C / W) PW (mS) 50 100 150 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation PT (W) Ta (°C) 0.5 0.1 0.05 0.03 3 5 10 50 100 IC (A) VCE (V) Single Pulse Without Heatsink T a=25°C 100µs 1ms 10m s R 1 R 2 15,16 13,14 11,12 9,10 R 1: 4kΩ typ R2: 150Ω typ NPN Darlington With built-in avalanche diode External dimensionsE • • • SD Absolute maximum ratings Electrical characteristics I Equivalent circuit diagram