SDC03_01 SANKEN | Alldatasheet
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IC -VCE Characteristics (Typical) h FE -IC Characteristics (Typical) h FE -IC Temperature Characteristics (Typical) VCE (sat)-IC Temperature Characteristics (Typical) V CE (sat)-IB Characteristics (Typical) I C -VBE Temperature Characteristics (Typical) θ j-a-PW Characteristics P T-Ta Characteristics Safe Operating Area (SOA) SDC03 (Ta=25°C) Symbol Ratings Unit VCBO 60±10 V VCEO 60±10 V VEBO 6V IC 1.5 A ICP 2.5 (PW≤1ms, Du≤10%) A IB 0.1 A PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C θ j–a 41.6 °C/W (Ta=25°C) Symbol Unit Conditions ICBO 10 µAV CB =50V IEBO 1.1 3.5 mA V EB =6V VCEO 50 60 70 V I C =10mA hFE 2000 5000 12000 V CE =4V, IC =1A VCE (sat) 1.2 1.4 V VBE (sat) 1.8 2.2 V VFEC 1.3 1.8 V I FEC =1A ton 0.5 µsV CC 30V, tstg 4.0 µsI C =1A, tf 1.0 µsI B1=–IB2=2mA fT 50 MHz V CE =12V, IE=–0.1A C ob 25 pF V CB =10V, f=1MHz IC =1A, IB=2mA Specification min typ max 2.5 2.0 1.5 1.0 0.5 012 345 IC (A) VCE (V) IB=10mA 2mA A 0.6mA 0.4m A 0.3mA (VCE =4V)10000 5000 1000 500 100 hFE IC (A) typ 10000 5000 1000 500 100 hFE IC (A) (VCE =4V) Ta=125 75°C 25°C –30°C (IC / IB=1000) 0.2 0.5 1 2.5 VCE (sat) (V) IC (A) Ta=125°C 75°C 25°C –30°C 0.1 0.5 1 5 10 50 100 IB (mA) VCE (sat) (A) IC =2A 0.5A 2.5 2.0 1.5 1.0 0.5 0123 IC (A) VBE (V) (VCE =4V) T a=125°C 75°C –30 1000500100501051 θ j–a (°C / W) PW (mS) 50 100 150 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation PT (W) Ta (°C) 0.5 0.1 0.05 3 5 10 50 100 VCE (V) IC (A) 100 µS 1mS 10m S Single Pulse Without Heatsink T a=25°C R 1 R 2 15,16 13,14 11,12 9,10 NPN Darlington With built-in avalanche diode R 1: 3.5kΩ typ R2: 200Ω typ External dimensionsE • • • SD Absolute maximum ratings I Equivalent circuit diagram