SDBT40S150C KODENSHI | Alldatasheet
Document overview
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Technical content
Rev. date: 20-JAN-17 KSD-D0O116-001 www.auk.co.kr 1 of 5 SDBT40S150C Trench Schottky Rectifier Dual Common Cathode Trench Schottky Rectifier Features and Benefits Trench scohttky technology Low forward drop voltage Low power losses, high efficiency Full lead (Pb)-free device and RoHS compliant device
Applications
Switching power supply Output rectification Power conversion system General Description The SDBT40S150C has two schottky barriers arranged in a common cathode configuration and is ideally suited for a full wave output rectifier in low switching power supplies and DC to DC converter where small size and high reliability are required.
Ordering Information
Part Number Marking Code Package Packaging SDBT40S150C BT40S150C TO-220F-3L Tube Marking Information AUK ΔYMDD SDB20D45 AUK ΔYMDD SDB20D45 AUK ◎Δ YMDD BT40S150C TO-220F-3L 1 2 3 Pin 1, 3 : Anode Pin 2: Cathode 1 2 3 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code
Rev. date: 20-JAN-17 KSD-D0O116-001 www.auk.co.kr 2 of 5 Absolute Maximum Ratings (Limiting values at 25 C, unless otherwise specified) Characteristic Symbol Ratings Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM VRWM VR 150 V Maximum average forward rectified current Per diode IF(AV) A Total device 40 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 200 A Storage temperature range Tstg -40 to +150 Maximum operating junction temperature TJ 150 Thermal Characteristics (Per diode) Characteristic Symbol Ratings Unit Maximum thermal resistance Rth(J-C) 4.0 C/W Rth(J-A) 62.5 Electrical Characteristics (Per diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop VFM IFM = 10A TJ =25℃ - 0.75 - V IFM = 20A 0.85 0.93 Reverse leakage current IRM 2) VR = VRRM TJ=25℃ - - 250 uA TJ=125℃ - - 20 mA Junction capacitance Cj VR = 10VDC, f=1MHz - 250 - pF 1) Pulse test: tP≤380us, Duty cycle≤2% 2) Pulse test: tP≤20ms, Duty cycle≤2% SDBT40S150C
Rev. date: 20-JAN-17 KSD-D0O116-001 www.auk.co.kr 3 of 5 Typical Electrical Characteristic Curves (Per diode) SDBT40S150C Fig. 1) Typical Forward Characteristics Fig. 2) Typical Reverse Characteristics Fig. 3) Typical Junction Capacitance Characteristics Fig. 4) Peak Forward Surge Current Characteristics Fig. 5) Thermal Impedance Characteristics Fig. 6) Average Forward Current Characteristics
Rev. date: 20-JAN-17 KSD-D0O116-001 www.auk.co.kr 4 of 5 Package Outline Dimensions (Unit: mm) SDBT40S150C
Rev. date: 20-JAN-17 KSD-D0O116-001 www.auk.co.kr 5 of 5 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which c ould have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. SDBT40S150C