SDB310WAF_1 AUK | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- ••• Low power rectified
- Silicon epitaxial type
- High reliability
Ordering Information
Type No. Marking Package Code SDB310WA DB2 SOT-23F O u t l i n e D i m e n s i o n s u n i t : mm PIN Connections 1. Cathode 2. Cathode 3. Anode, Anode SSeemmiiccoonndduuccttoorr 0.4±0.05 0~0.1
1.90 BSC
2.9±0.1 0.15±0.05 2.4±0.1 0.9±0.1 1.6±0.1
A b s o l u t e m a x i m u m r a t i n g s Ta=25°C Characteristic Symbol Ratings Unit Reverse voltage V R 30 V Repetitive peak forward current I FRM * 0.5 A Forward current I F 0.2 A Non-repetitive peak forward current(10ms) I FSM 2A Power dissipation P D 150 mW Junction temperature T j 150 °C Storage temperature T stg -55 ~ 150 °C * : δ = D/T =0.33 ( T < 1 S ) * : Unit ratings. Total rating=Unit rating×1.5 E l e c t r i c a l C h a r a c t e r i s t i c s Ta=25°°°°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage 1 V F(1) IF=10mA -- 0 . 4V Forward voltage 2 V F(2) IF=30mA - - 0.5 V Reverse current I R VR=30V - - 1 µA Total capacitance C T VR=1V, f=1MHz - - 10 pF Reverse recovery time trr IF= IR=10mA, IRR= 1mA, RL=100Ω -- 5n s
Electrical Characteristic Curves Fig. 3 C T-VR Fig. 1 I F-VF Fig. 2 I R -VR