SDB310Q_1 AUK | Alldatasheet

Document overview

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Technical content

Features

  • Low power rectified
  • Silicon epitaxial type
  • High reliability

Ordering Information

Type No. Marking Package Code SDB310Q S2 SOD-523 O u t l i n e D i m e n s i o n s u n i t : mm SSeemmiiccoonndduuccttoorr PIN Connections 1. Anode 2. Cathode 1 2 1.50~1.70 1.10~1.30 0.32 Max. 0.70~0.90 0.60~0.80 0.10 Max. 0.16 Max. CATHODE MARK 1 2

A b s o l u t e m a x i m u m r a t i n g s Ta=25°C Characteristic Symbol Ratings Unit Reverse voltage V R 30 V Repetitive peak forward current I FRM * 0.5 A Forward current I F 0.2 A Non-repetitive peak forward current(10ms) I FSM 2 A Power dissipation P D 150 mW Junction temperature T j 150 °C Storage temperature T stg -55 ~ 150 °C * : δ = D/T =0.33 ( T < 1 S ) * : Unit ratings. Total rating=Unit rating×1.5 E l e c t r i c a l C h a r a c t e r i s t i c s Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage 1 V F(1) IF=10mA - - 0.4 V Forward voltage 2 V F(2) I F=30mA - - 0.5 V Reverse current I R V R=30V - - 1 µA Total capacitance C T V R=1V, f=1MHz - - 10 pF Reverse recovery time trr IF= IR=10mA, IRR= 1mA, RL=100Ω - - 5 ns

Electrical Characteristic Curves Fig. 3 C T-VR Fig. 1 I F-VF Fig. 2 I R -VR