SDB310D_1 AUK | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- Low power rectified
- Silicon epitaxial type
- High reliability
Ordering Information
Type No. Marking Package Code SDB310D B1 SOD-323 O u t l i n e D i m e n s i o n s u n i t : mm SSeemmiiccoonndduuccttoorr PIN Connections 1. Anode 2. Cathode 2.35~2.65 0.35 Max. 1.15~1.35 1.60~1.80 CATHODE MARK 0.80~1.00 0.10 Max. 0.19 Max. 0.20 Min. 2 1 1 2
A b s o l u t e m a x i m u m r a t i n g s Ta=25°C Characteristic Symbol Ratings Unit Reverse voltage V R 30 V Repetitive peak forward current I FRM * 0.5 A Forward current I F 0.2 A Non-repetitive peak forward current(10ms) I FSM 2 A Power dissipation P D 150 mW Junction temperature T j 150 °C Storage temperature T stg -55 ~ 150 °C * : δ = D/T =0.33 ( T < 1 S ) * : Unit ratings. Total rating=Unit rating×1.5 E l e c t r i c a l C h a r a c t e r i s t i c s Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage 1 V F(1) IF=10mA - - 0.4 V Forward voltage 2 V F(2) I F=30mA - - 0.5 V Reverse current I R V R=30V - - 1 µA Total capacitance C T V R=1V, f=1MHz - - 10 pF Reverse recovery time trr IF= IR=10mA, IRR= 1mA, RL=100Ω - - 5 ns
Electrical Characteristic Curves Fig. 3 C T-VR Fig. 1 I F-VF Fig. 2 I R -VR