DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

 Low forward voltage drop and leakage current  Low power loss and High efficiency  ESD capability  Dual common cathode rectifier  Full lead (Pb)-free and RoHS compliant device

Applications

 Power supply - Output rectification  High efficiency SMPS  Free-wheeling diode  Reverse battery protection  DC to DC systems

Description

The SDB2045PI has two schottky barriers arranged in a common cathode configuration. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection

Ordering Information

Device Marking Code Package Packaging SDB2045PI SDB2045 TO-220F-3L Tube Marking Information Product Characteristics IF(AV) 2 X 10A VRRM 45V VFM at 125℃ 0.50V IFSM 120A Pin 1, 3: Anode Pin 2: Cathode 1 2 31 2 3 1 2 3 AUK = Manufacture Logo ∆ = Control Code of Manufacture YMDD = Date Code Marking -. Y = Year Code -. M = Monthly Code -. DD = Daily Code SDB2045 = Specific Device Code AUK △YMDD SDB2045

Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage VRRM VRWM VR 45 V Maximum average forward rectified current per diode IF(AV) A total device 20 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 120 A Storage temperature range T stg -45 ℃ to +150 ℃ ℃ Maximum operating junction temperature T J 150 ℃ Thermal Characteristics Characteristic Symbol Value Unit Maximum thermal resistance junction to case per diode Rth(j-c) 4.0 ℃/W total device 3.5 Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop V FM (1) I FM = 10A Tj=25℃ - - 0.54 V Tj=125℃ - - 0.50 V Reverse leakage current I RM (1) V R = VRRM Tj=25℃ - - 1.5 mA Tj=125℃ - - 150 mA Junction capacitance C j V R = 5VDC, f=1MHz - 650 - pF Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation (Fig 4.) : PF = 0.35 x IF(AV) + 0.015 IF (RMS) SDB2045PI IFM

2 IF(AV)

IF(AV) VFM Forward Voltage : VFM = Vto + rd IFM Conduction Loss : PF = Vto IF(AV) + rd IF (RMS) rd Vto

Rating and Characteristic Curves SDB2045PI Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve Fig. 6) Typical Junction Capacitance (Per diode) Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward S u r g e C u r r e n t (Per diode)

The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipm ents without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. SDB2045PI