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D Fe L L H D F Ap P C F R P De Th ap pro Or M UAL CO eatures Low forward Low power High surge Dual comm Full lead(Pb pplication Power supp Converter Free-wheel Reverse ba Power inver escription he SDB1060 pplications a otection. rdering In Dev SDB1 arking In OMMON d voltage dr loss and Hi capability on cathode b)-free devic ns ply - Output ing diode attery protec rters n 0PI has two are in switch nformatio vice 060PI formation CATHO rop and lea igh efficienc e rectifier ce and RoH rectification ction o schottky b hing power on Ma S n KSD DE SCH kage curren cy HS complian n barriers arra supplies, co arking Code DB1060PI AUK = ∆ = Co YMDD -. Y = -. M -. DD SDB10 D-D0O003-00 HOTTKY nt nt device anged in a c onverters, f Manufacture ontrol Code o = Date Cod Year Code = Monthly Co = Daily Cod 060PI = Spec RECTIF common cat free-wheelin Package TO-220F- Product C IF VR VFM at IF 1 2 e Logo of Manufactu e Marking ode e cific Device C S TO FIER thode config ng diodes, a e Characterist (AV) RRM t 125℃ FSM 2 3 ure Code SDB1 Schottky B O-220F-3L guration. Ty and reverse Pack Tu tics Pin 1, Pin 2 : 1 1 060P Barrier Rectif ypical e battery kaging ube X 5A 60V .55V 20A 3 : Anode Cathode 2 3 2 3 PI fier
Absolute Maximum Ratings (Limiting Values) Characteristic Symbol Value Unit Maximum repetitive reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage V RRM VRWM VR 60 V Maximum average forward rectified current per diode IF(AV) A total device 10 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode IFSM 120 A Storage temperature range T stg -55℃ to +150 ℃ ℃ Maximum operating junction temperature T j 150 ℃ Thermal Characteristics Characteristic Symbol Value Unit Maximum thermal resistance junction to case per diode Rth(j-c) 4.0 ℃/W total device 3.6 Electrical Characteristics (Per Diode) Characteristic Symbol Test Condition Min. Typ. Max. Unit Peak forward voltage drop V FM (1) I FM = 5A Tj=25℃ - - 0.65 V Tj=125℃ - - 0.55 V Reverse leakage current I RM (1) V R = VRRM Tj=25℃ - - 0.5 mA Tj=125℃ - - 50 mA Junction capacitance C j V R = 10VDC, f=1MHz - 160 - pF Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2% To evaluate the conduction losses use the following equation: PF = 0.36 IF(AV) + 0.043 IF (RMS) SDB1060PI IFM
2 IF(AV)
IF(AV) VFM Forward Voltage : VFM = Vto + rd IFM Conduction Loss : PF = Vto IF(AV) + rd IF (RMS) rd Vto
Rating and Characteristic Curves SDB1060PI Fig. 1) Typical Forward Characteristics (Per diode) Fig. 2) Typical Reverse Characteristics (Per diode) Fig. 3) Maximum Forward Derative Curve Fig. 6) Typical Junction Capacitance (Per diode) Fig. 4) Forward Power Dissipation (Per diode) Fig. 5) Maximum Non-Repetitive Peak Forward Surge Current (Per diode)
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication e quipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equi pments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. SDB1060PI