SDB1045L ZSELEC | Alldatasheet

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Case:TO-277B Molded Plastic "Green" Molding Compound mmended pad layout . 2. FR-4 PCB, 2oz. Copper, minimum reco (Note 3 Typical Thermal Resistance Junction to Ambient 80 -55 to +150 °C Operating Temperature Range Storage Temperature Range -55 to +150 °C

30000 W°C)Repetitive Peak Avalanche Power(1us,25

Excellent High Temperature Stability A t Rated DC Blocking Voltage P e a k R e v e r s e C u r r e n t 45 V 32 V Forward Voltage Drop = 10A , Ta = 25°C We ight: 0.093 grams (approx.) Lead Free: For RoHS/Lead Free Version High Thermal Reliability Ultra Low Power Loss, High Efficiency High Foward Surge Capability High Junction Temperture Bypass Diodes for Solar Panels 10.0 A SUPER BA RRIER RECTIFIER SDB1045L Feat ures M echanical Data Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Mounting Position: Any ! Marking: Type Number M aximum Ra tings and Electrical Characteristics @T A=2 5°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRW M VR RMS Reverse Voltage VR(RM S) A verage Rectified Output Current (Note 1) @TL =100°C I O 10. 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FS M 275 A VFM 0. 42 V IR 15 mA TST G Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 1 of 2 SDB1045L Patented Super Bar rier Rectifier Technology! IF Tj = 25°C Tj = 100°C PARM VR ≤ 80% VRR C/W (Note 2) RθJA Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com TO-277B 0.45 0.20 1.20 1.00 6.60 6.40 1.00 0.80 1.20 1.00 3.20 2.90 0.65 0.45 5.50 5.30 1.90 1.70 4.20 3.80 1.95 1.65 3.85 3.25 Dimensions in millimeters

Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com R RR FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0.4 0.2 0.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.01 0.1 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 100 JUNCTION CAPACITANCE, pF 10000 1.0 4.0 10 100 1000 TJ=25 o C PULSE WIDTH=300uS 1% DUTY CYCLE TJ=100 o C TJ=25 o C TJ = 25 o C f = 1.0 MHZ Vsig = 50mVp-p FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 10.0 8.0 4.0 2.0 6.0 0 50 100 150 LEAD TEMPERATURE, o C

60 Hz Resistive or

FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz PEAK FORWARD SURGE CURRENT, AMPERES 100 125 150 175 200 1 10 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 225 250 275