SDB06S60_05 INFINEON | Alldatasheet

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Technical content

2005-02-17Rev. 2.0 Page 1 SDB06S60 thinQ!¥ SiC Schottky DiodeSilicon Carbide Schottky Diode

  • Worlds first 600V Schottky diode
  • Revolutionary semiconductor material - Silicon Carbide
  • Switching behavior benchmark
  • No reverse recovery
  • No temperature influence on the switching behavior
  • Ideal diode for Power Factor Correction up to 1200W1)
  • No forward recovery Product Summary VRRM 600 V Qc 21 nC IF 6 A D2PAK Pin 1 Pin 2Type Package Ordering Code SDB06S60 D2PAK Q67040-S4370 Pin 3Marking D06S60 n.c. C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous forward current, TC=100°C IF 6 A RMS forward current, f=50Hz IFRMS 8.4 Surge non repetitive forward current, sine halfwave TC=25°C, tp=10ms IFSM 21.5 Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM 28 Non repetitive peak forward current tp=10µs, TC=25°C IFMAX 60 i 2t value, TC=25°C, tp=10ms ³i2dt 2.3 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 57.6 W Operating and storage temperature Tj , Tstg -55... +175 °C

2005-02-17Rev. 2.0 Page 2 SDB06S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.6 K/W Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 2) P-TO252-3-1: @ min. footprint P-TO252-3-1: @ 6 cm2 cooling area 2) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=6A, Tj=25°C IF=6A, Tj=150°C VF 1.5 1.7 1.7 2.1 V Reverse current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 200 1000 µA 1CCM, VIN= 85VAC, Tj = 150°C, TC =100°C, η = 93%, ∆ IIN = 30% 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

2005-02-17Rev. 2.0 Page 3 SDB06S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Total capacitive charge VR=400V, IF=6A, diF/dt=200A/µs, Tj=150°C Qc - 21 - nC Switching time VR=400V, IF=6A, diF/dt=200A/µs, Tj=150°C trr - n.a. - ns Total capacitance VR=0V, TC=25°C, f=1MHz VR=300V, TC=25°C, f=1MHz VR=600V, TC=25°C, f=1MHz C 300 pF

2005-02-17Rev. 2.0 Page 4 SDB06S60

1 Power dissipation

Ptot = f (TC) 0 20 40 60 80 100 120 140 °C 180 TC W Ptot

2 Diode forward current

IF= f (TC) parameter: Tj≤175 °C 0 20 40 60 80 100 120 140 °C 180 TC 0.5 1.5 2.5 3.5 4.5 5.5 A 6.5 IF 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 0 2 4 6 8 A 12 IF(AV) W PF(AV) d=0.1 d=0.2 d=0.5 d=1 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 0 0.5 1 1.5 V 2.5 VF A IF 150°C 125°C 100°C 25°C -40°C

2005-02-17Rev. 2.0 Page 5 SDB06S60 5 Typ. reverse current vs. reverse voltage IR=f(VR) 100 150 200 250 300 350 400 450 500 V 600 VR -310 -210 -110 010 110 210 µA IR 150°C 125°C 100°C 25°C

6 Transient thermal impedance

ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -410 -310 -210 -110 010 110 K/W SDP06S60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50 7 Typ. capacitance vs. reverse voltage C= f(VR) parameter: TC = 25 °C, f = 1 MHz 10 0 10 1 10 2 10 3 V VR 100 150 pF 250 C 8 Typ. C stored energy EC=f(VR) 0 100 200 300 400 V 600 VR 0.5 1.5 2.5 µJ 3.5 EC

2005-02-17Rev. 2.0 Page 6 SDB06S60 9 Typ. capacitive charge vs. current slope Qc=f(diF/dt) parameter: Tj = 150 °C 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt nC Qc IF*0.5 IF IF*2

PG-TO220-3-45 (D2Pak): Outline Rev. 2.0 page 7 2005-02-17 Dimensions in mm/inches Rev. 2.0 page 7 2005-02-17

2005-02-17Rev. 2.0 Page 8 SDB06S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.