SD930 DIODES | Alldatasheet
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A 25.40 — B 7.20 9.50 C 1.20 1.30 D 4.80 5.30 All Dimensions in mm A AB C D Characteristic Symbol SD930 SD940 SD945 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 30 40 45 V Maximum Average Forward Current @ T C = 120°C (Note 2) IO 9.0 A Maximum Peak One-Cycle @ 5µs Sine Wave Surge Current @ 10ms Sine Wave I FSM 2150 340 A Forward Voltage (Note 1) @ I F = 9.0A, TJ = 25°C @ IF = 9.0A, TJ = 125°C @ IF = 18A, TJ = 25°C @ IF = 18A, TJ = 125°C VFM 0.48 0.42 0.57 0.52 V Voltage Rate of Change dv/dt 10,000 V/µs Peak Reverse Current @T J = 25°C at Rated DC Blocking Voltage (Note 1) @ T J = 125°C IRM 0.8 70 mA Maximum Junction Capacitance (Note 2) Cj 900 pF Typical Thermal Resistance Junction to Case (Note 4) R/c113JL 8.0 K/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
DS23026 Rev. C-2 2 of 3 SD930/SD940/SD945 0 50 100 150 I ,AVERA GER ECTIFIED CURRENT (A) O T , CASE TEMPERATURE (°C) Fig. 1 Fwd Current Derating Curve C 1000 10000 10 100 1000 10000 PEAK FORW ARD SURGE CURRENT (A) t , PULSE DURATION (ms) Fig. 4, Maximum Non-repetitive Surge Current p 100 1000 4000 0.1 1.0 10 100 C ,CAP ACIT ANCE (pF) j V , REVERSE VOLTAGE (V) Fig. 3 Maximum Junction Capacitance R TJ = 25°C f = 1MHz 0.1 1.0 I,INST ANT ANE OUS FWD CURRENT (A) F V , INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T = 125°CJ T = 25°CJ Pulse width = 300µs 2% duty cycle
DS23026 Rev. C-2 3 of 3 SD930/SD940/SD945 0.01 0.1 1.0 THERMAL RESIST ANCE R (K/W) QJL t , RECTANGULAR PULSE DURATION (seconds) Fig. 5, Typical Thermal Resistance R QJL P(DM) Duty Cycle, D = t / t Peak T = P X R + T JD M QJL C Single Pulse 0.08 0.17 0.25 0.33 D = 0.50 0 20 40 60 80 100 120 140I ,INST ANT ANEOUS REVERSE CURRENT (mA R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 6, Typical I vs. % of VRR T = 125ºCj T = 85ºCj T = 25ºCj 100 1.0 0.1 0.01