SD823C

SD823C IRF | Alldatasheet

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Features

High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Hockey Puk version case style B-43 Maximum junction temperature 150°C Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applicationsIF(AV) 810 910 A @ T hs 55 55 °C IF(RMS) 1500 1690 A IFSM @ 50Hz 9300 9600 A @ 60Hz 9730 10050 A V RRM range 1200 to 25001200 to 2500 V trr 2.0 3.0 µs @ T J 25 25 °C TJ - 40 to 150 °C Parameters Units Major Ratings and Characteristics case style B-43

SD823C..C Series D-716 Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max. Type number Code peak reverse voltage repetitive peak rev. voltage@ T J = TJ max. V V mA 12 1200 1300 16 1600 1700 20 2000 2100 25 2500 2600 ELECTRICAL SPECIFICATIONS Voltage Ratings SD823C..C 50 IF(AV) Max. average forward current810 (425) 910 (470) A 180° conduction, half sine wave @ heatsink temperature 55 (85) 55 (85) °C Double side (single side) cooled IF(RMS) Max. RMS forward current 1500 1690 A @ 25°C heatsink temperature double side cooled IFSM Max. peak, one-cycle forward,9300 9600 t = 10ms No voltage non-repetitive surge current 9730 10050 t = 8.3ms reapplied 7820 8070 t = 10ms 100% V RRM 8190 8450 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 432 460 t = 10ms No voltage Initial TJ = TJ max. 395 420 t = 8.3ms reapplied 306 326 t = 10ms 100% V RRM 279 297 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 4320 4600 KA 2√s t = 0.1 to 10ms, no voltage reapplied V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage rf1 Low level value of forward slope resistance rf2 High level value of forward slope resistance V FM Max. forward voltage drop 2.20 1.85 V Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave 0.76 0.57 (I > π x IF(AV)),TJ = TJ max. 0.80 0.60 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. 1.11 1.06 (I > π x IF(AV)),TJ = TJ max. 1.00 0.95 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. KA 2s A V m Ω Forward Conduction Parameter Units ConditionsSD823C..C S20 S30 Code (µs) (A) (A/µs) (V) (µs) (µC) (A) Test conditions Max. values @ TJ = 150 °C Recovery Characteristics Typical trr Ipk di/dt Vr trr Q rr Irr @ 25% IRRM Square Pulse @ 25% IRRM S20 2.0 1000 50 - 50 3.5 240 110 S30 3.0 1000 50 - 50 5.0 380 130 TJ = 25 oC

SD823C..C Series D-719 Fig. 3 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics Fig. 6 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 7 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics

SD823C..C Series D-720 Fig. 9 - Forward Power Loss Characteristics Fig. 10 - Forward Power Loss Characteristics Fig. 11 - Forward Power Loss Characteristics Fig. 12 - Forward Power Loss Characteristics Fig. 13 - Maximum Non-repetitive Surge Current Fig. 14 - Maximum Non-repetitive Surge Current

SD823C..C Series D-721 Fig. 16 - Maximum Non-repetitive Surge CurrentFig. 15 - Maximum Non-repetitive Surge Current Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics Fig. 19 - Thermal Impedance ZthJ-hs Characteristic

SD823C..C Series D-722 Fig. 25 - Recovery Time CharacteristicsFig. 26 - Recovery Charge CharacteristicsFig. 27 - Recovery Current Characteristics Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics Fig. 24 - Recovery Current CharacteristicsFig. 22 - Recovery Time CharacteristicsFig. 23 - Recovery Charge Characteristics

SD823C..C Series D-723 Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics Fig. 31 - Frequency Characteristics

SD823C..C Series D-724 Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 35 - Frequency Characteristics Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 37 - Frequency Characteristics

SD823C..C Series D-717 SD823C..C S20 S30 TJ Max. junction operating temperature range -40 to 150 Tstg Max. storage temperature range -40 to 150 R thJ-hs Max. thermal resistance, case junction 0.076 DCoperation single side cooled to heatsink 0.038 DCoperation double side cooled F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 83 g Case style B-43 See Outline Table Parameter Units Conditions Thermal and Mechanical Specifications K/W Conduction angle Units Conditions Single SideDouble Side Single SideDouble Side Sinusoidal conductionRectangular conduction 120° 0.008 0.008 0.008 0.008 90° 0.010 0.010 0.011 0.011 K/W 60° 0.015 0.015 0.016 0.016 30° 0.026 0.026 0.026 0.026 ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Ordering Information Table 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - trr code 7 - C = Puk Case B-43 SD 82 3 C 25 S20 C 1 2 3 4 5 6 7 Device Code

SD823C..C Series D-718 Outline Table Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 0.8(0.03) MIN. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) DEEP MIN. BOTH ENDS 1 4.4 (0.57 ) 1 5.4 (0.61 ) BOTH ENDS 40.5 (1.59) DIA. MAX. 25.3 (1) DIA. MAX. TWO PLACES 42 (1.65 ) D IA . M A X . Conform to JEDEC B-43 All dimensions in millimeters (inches)