SD820S HITANO | Alldatasheet
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Technical content
R HITANO ENTERPRISE CORP. SD820S THRU SD8100S TECHNICAL SPECIFICA TIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts CURRENT - 8.0 Amperes
FEATURES
- Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DA T A * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 * Mounting position: Any * Weight: 0.4 grams Approx. . 35 Max (0.) TO-252(DPAK) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) SYMBOL SD820S SD830S SD840S SD850S SD860S SD880S SD8100S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 80 100 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 Volts Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 Volts Maximum Average Forward Rectified Current at TC=75 o C IO
8.0 Amps
Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM
100 Amps
Maximum Instantaneous Forward Voltage at 4.0A DC for "C suffixed", and at 8.0A DC for "Y suffixed" & "no suffix" V F 0.65 0.75
0.85 Volts
o @T A = 25 C 2.0 Maximum DC Reverse Current at Rated DC Blocking Voltage @TA = 100 o C IR mAmps Typical Thermal Resistance (Note1) R θ JA 80 0 C/ W Typical Junction Capacitance (Note 2) CJ 700 pF Storage Operating T emperature Range TJ, TSTG -55 to + 125 0 C Note : 1. Mounted on PC Board with 14mm2(0.013mm thick) copper pad areas. 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES (SD820S THRU SD8100S)