SD72305 SMC | Alldatasheet

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Technical content

Technical Data Green Products Data Sheet N1507, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SD72305 SD72305 Unidirectional Discrete TVS Applications:
  • Mobile phones
  • Smart phones
  • PDAs
  • Portable navigation devices
  • Digital cameras
  • Portable medical devices Features:
  • ESD, IEC61000-4-2, ±30kV contact, ±30kV air
  • EFT, IEC61000-4-4, 40A(5/50ns)
  • Lightning, IEC61000-4-5, 7A (8/20 μμ μμs)
  • Low leakage current of 100nA (MAX) at 5V
  • Tiny SOD723(JEDEC MO-236) package saves board space
  • Fits solder footprint of industry standard 0402(1005) devices
  • This is a Pb − Free Device
  • All SMC parts are traceable to the wafer lot
  • Additional testing can be offered upon request Mechanical Dimensions: In mm SOD-723

Technical Data Green Products Data Sheet N1507, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SD72305 Marking Diagram: Where X5 is SD72305 X5 = Part Name Cautions ： Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping SD72305 SOD-723(Pb-Free) 8000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings and Thermal Information @T A=25° C unless otherwise specified Parameter Symbol Value Unit Peak Pulse Current (tp=8/20 μs) I pp 7 A Maximum Lead Temperature (Soldering 20-40s) T L 260 ° C Operating Storage Temperature Range T STG -55 to 150 ° C Operating Junction Temperature T J 150 ° C

Technical Data Green Products Data Sheet N1507, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SD72305 Electrical Characteristics( TJ = 25 °C ) Characteristics Symbol Condition Min. Typ. Max. Units Forward Voltage Drop* V F IF=10mA - 0.8 1.2 V Reverse Voltage Drop V R IR =1mA 6.0 7.8 8.5 V Reverse Standoff Voltage V RWM IR =1µA - - 5.0 V Reverse Leakage Current ILEAK VR =5V - - 100 nA Ipp=6A tp=8/20 µs - 11.4 - V Clamp Voltage(Note 1) VC Ipp=7A tp=8/20 µs - 12.0 - V Diode Capacitance(Note 1) C D Reverse Bias=0V - 30 - pF Note: 1 Parameter is guaranteed by design and/or device characterization. Capacitance vs. Reverse Bias Fig.1-Capacitance vs. Reverse Bias Fig.2-Clamping Voltage vs. I PP

Data Sheet N1507, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SD72305 Fig.3-Leakage vs. Temperature Fig.4-Pulse Waveform

Technical Data Green Products Data Sheet N1507, Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 /filetalltext (86) 25-87123907 • SD72305 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..