SD630-70-73-500 ADVANCEDPHOTONIX | Alldatasheet

Document overview

  • Manufacturer or author: pROVIDED bY alldatasheet.com(free datasheet download site)
  • PDF pages: 1

Technical content

FEATURES DESCRIPTION APPLICATIONS

  • Low noise
  • High gain
  • High Speed SYMBOL PARAMETER MIN MAX UNITS M Gain 250 TSTG Storage Temperature -55 +70 °C TO Operating Temperature -55 +40 °C TS Soldering Temperature* +240 °C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID Dark Current 280 600 nA CJ Junction Capacitance f = 1 MHz 130 pF IN Noise Current Spectral Density f = 100 kHz 2.5 5.5 pA/√Hz lrange Spectral Application Range Spot Scan 350 1050 nm R Responsivity l= 350 nm, VR = 0 V 38 A/W Vop Operating voltage 1700 2000 V TVBR Temp. Coeff. Breakdown voltage Constant Gain = 200 2 V tr Response Time* RL = 50 Ω, l= 675nm 15 22 nS SPECTRAL RESPONSE M = 200 100 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050Wavelength (nm) Responsivity (A/W) 100 Quantum Efficiency (%) Non-Cooled Large Area UV Silicon Avalanche Photodiode SD 630-70-73-500 PACKAGE DIMENSIONS INCHES SHV PACKAGE The SD 630-70-73-500 is a non-cooled large area UV enhanced silicon avalanche photodiode (APD) with high gain and low noise in a SHV package.
  • Instrumentation
  • Medical * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and Gain of 200 UNLESS OTHERWISE NOTED *Response time of 10% to 90% is specified at 675nm wavelength light. Each part is supplied with gain bias voltages and dark current data. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso , Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED QE R Connector center pin cathode Connector outer jacket anode