SD603C12S15C

SD603C IRF | Alldatasheet

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High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2200V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC B-43 Maximum junction temperature 125°C Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics IF(AV) 600 A @ Ths 55 °C IF(RMS) 942 A @ Ths 25 °C IFSM @ 50Hz 8320 A @ 60Hz 8715 A I2t@ 50Hz 346 KA 2s @ 60Hz 316 KA 2s VRRM range 400 to 2200 V trr range 1.0 to 2.0 µs @ TJ 25 °C TJ - 40 to 125 °C Parameters SD603C..C Units case style B-43

SD603C..C Series Bulletin I2068 rev. C 04/00 www.irf.com Code (µs) (A) (A/ µs) (V) ( µs) ( µC) (A) Test conditions Max. values @ T J = 125 °C Recovery Characteristics typical trr Ipk di/dt V r trr Qrr Irr @ 25% IRRM Square Pulse @ 25% I RRM TJ = 25 oC S10 1.0 2.0 45 34 S15 1.5 1000 25 -30 3.2 87 51 S20 2.0 3.5 97 55 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V RRM max. repetitive V RSM , maximum non- I RRM max. Type number Code peak and off-state voltage repetitive peak voltage T J = 125°C VV m A 04 400 500 SD603C..S10C 08 800 900 10 1000 1100 12 1200 1300 SD603C..S15C 14 1400 1500 16 1600 1700 20 2000 2100 22 2200 2300 Parameter SD603C..C Units Conditions Forward Conduction KA2s A IF(AV) Max. average forward current 600(300) A 180 ° conduction, half sine wave. @ Heatsink temperature 55(75) °C Double side (single side) cooled IF(RMS) Max. RMS current 942 A @ 25 °C heatsink temperature double side cooled IFSM Max. peak, one-cycle 8320 t = 10ms No voltage non-repetitive forward current 8715 t = 8.3ms reapplied 7000 t = 10ms 100% V RRM 7330 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 346 t = 10ms No voltage Initial T J = TJ max. 316 t = 8.3ms reapplied 245 t = 10ms 100% V RRM 224 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 3460 KA 2√s t = 0.1 to 10ms, no voltage reapplied VF(TO)1 Low level of threshold voltage 1.36 ( 16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. VF(TO) 2 High level of threshold voltage 1.81 (I > π x IF(AV)), TJ = TJ max. rf1 Low level of forward slope resistance 0.87 ( 16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. rf2 High level of forward slope resistance 0.67 (I > π x IF(AV)), TJ = TJ max. VFM Max. forward voltage 2.97 V I pk= 1885A, TJ = 25°C, tp = 10ms sinusoidal wave mΩ V SD603C..S20C

SD603C..C Series Bulletin I2068 rev. C 04/00 www.irf.com 51 2 3 4 SD 60 3 C 22 S20 C Device Code TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.076 DC operation single side cooled junction to heatsink 0 .038 DC operation double side cooled F Mounting force, ± 10% 9800 N (1000) (Kg) wt Approximate weight 83 g Case style B-43 See Outline Table Parameter SD603C..C Units Conditions Thermal and Mechanical Specifications ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) K/W 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = V RRM (see Voltage Ratings table) 6 -t rr code (see Recovery Characteristics table) 7 - C = Puk Case B-43 Ordering Information Table Sinusoidal conduction Rectangular conduction Conduction angle Units Conditions Single Side Double Side Single Side Double Side 180° 0.006 0.007 0.005 0.005 120° 0.008 0.008 0.008 0.008 60° 0.015 0.015 0.016 0.015 30° 0.026 0.025 0.026 0.025

SD603C..C Series Bulletin I2068 rev. C 04/00 www.irf.com Outline Table Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 100 110 120 130 0 100 200 300 400 500 30° 60° 90° 180° DC 120° Average Forward Current (A) Maximum Allowable Heatsink Temperature (°C) Conducti on Peri od SD 603C..C Series (Single Side Cooled) R (DC) = 0.076 K/W thJ-hs 100 110 120 130 0 50 100 150 200 250 300 350 30 ° 60 ° 90 ° 120 ° 180 ° A verage Forw ard C urre nt (A ) Maximum All ow able Heat sink T emper ature ( ° C) Conduction Angle SD603C ..C Ser ies (Single Side C ooled) R (DC ) = 0.076 K/WthJ-hs 0.8(0.03) MIN. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) DEEP MIN. BOTH ENDS 14.4 (0.57) 15.4 (0.61) BOTH ENDS 40.5 (1.59) DIA. MAX. 25.3 (1) DIA. MAX. TWO PLACES 42 ( 1. 65) DIA. MAX. Conform to JEDEC B-43 All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)

SD603C..C Series Bulletin I2068 rev. C 04/00 www.irf.com Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 100 110 120 130 0 200 400 600 800 100030 ° 60 ° 90 ° 180 ° DC 120 ° A ve rage Fo rw ard C urre nt (A ) Maxi m um All ow able Heatsi nk T em perature ( °C) Conducti on Per iod SD603C ..C Seri es (Double Side C ooled ) R (D C ) = 0.038 K/WthJ-hs 100 110 120 130 0 100 200 300 400 500 600 700 30 ° 60° 90° 120° 180 ° Average Forward Current (A) Maximum Allowable Heatsi nk Tempe rature ( °C) Conducti on Angle SD603C..C Series (Doubl e Si de Cooled) R (DC) = 0.038 K/WthJ-hs 200 400 600 800 1000 1200 1400 1600 1800 0 100 200 300 400 500 600 180 ° 120 ° 90 ° 60 ° 30 ° Average For ward Current (A) Maximum Average Forward Power Loss (W) RMS Lim it SD603C..C Series T = 125 °CJ Conduction Angle 500 1000 1500 2000 2500 0 200 400 600 800 1000 Average Forw ard Current (A) RMS Limit Maximum Average Forward Power Loss (W) DC 180 ° 120 ° 90° 60° 30° SD603C..C Series T = 125 °CJ Conduction Per i od 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 1 10 100 Peak Half Sine Wave Forw ard Current (A) Num ber o f Eq ual Am plitude Ha lf C yc le Cu rre nt Pu lses (N) In it ia l T = 1 2 5° C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J SD603C ..C Series At Any Rat ed Load Condi t i on and Wi th Rated V Applied Follow ing Surge. RRM 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 Pulse Train D ura tion (s) Peak Hal f Sine Wave Forward Current (A) M axim um N on Re petitive Surge C urre nt Ve rsus Pulse Train D uration . SD603C. .C Series Initial T = 1 25 °C No Volt age Reappli ed Rated V Reapplied J RRM

SD603C..C Series Bulletin I2068 rev. C 04/00 www.irf.com Fig. 9 - Forward Voltage Drop Characteristics Fig. 10 - Thermal Impedance Z thJ-hs Characteristic Fig. 11 - Typical Forward Recovery Characteristics 100 1000 10000 Instantaneous Forw ard Voltage (V) Instantaneo us Forw ard C urre nt (A ) T = 25 °CJ T = 125 °CJ SD603C ..C Seri es 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 Square W ave Pulse D uration (s) thJ-hsTransien t Therm al Im pedan ce Z (K/W) Ste ady State Value : R = 0.076 K/W (Single Side Cooled) R = 0.038 K/W (Double Si de Cooled) (DC O peration) thJ-hs thJ-hs SD603C..C Seri es 100 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Fo rw ard Rec ove ry (V ) T = 12 5 °C T = 25 °C J J Rate O ff Rise O f Fo rw ard C urre nt di/dt (A/ usec ) SD603C ..S20C Seri es I VFP Fig. 14 - Recovery Current CharacteristicsFig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics 100 110 120 10 20 30 40 50 60 70 80 90 100 M aximum Reverse Recovery Current - Irr (A) Rate Of Fall Of Forward Current - di/dt (A/µs) I = 1000 A Squa re P ulse FM 500 A 250 A SD 603C..S10C Series T = 125 °C; V = 30VrJ 100 110 120 130 10 20 30 40 50 60 70 80 90 100 M axim um Rev erse Rec o ve ry C harge - Q rr (µ C) Rate Of Fall Of Forward Current - di/dt (A/µs) I = 1000 A Squ are Pulse FM 500 A 250 A SD603C ..S10C Series T = 125 ° C; V = 30VrJ 1. 6 1. 7 1. 8 1. 9 2. 1 2. 2 10 100 Rate Of Fall Of Forward Current - di/dt (A/µs)Maximum Reverse Recovery Time - Trr (µs) I = 1000 A Squa re Pu lse 500 A 250 A FM SD603C..S10C Series T = 125 °C; V = 30VrJ

SD603C..C Series Bulletin I2068 rev. C 04/00 www.irf.com Fig. 15 - Recovery Time Characteristics Fig. 17 - Recovery Current CharacteristicsFig. 16 - Recovery Charge Characteristics 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90 100 M axim um Rev erse Re co ve ry Ch arge - Qrr (µC ) Rate Of Fall Of Forward Current - di/dt (A/µs) I = 1000 A Square Pulse FM 500 A 250 A SD603C ..S15C Seri es T = 125 ° C ; V = 30VrJ 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90 100 M axim um Reve rse Reco ve ry C harge - Qrr (µC ) Rate Of Fall Of Forward Current - di/ dt (A/µs) I = 1000 A Squ are Pulse 500 A 250 A FM SD603C ..S20C Ser ies T = 125 °C ; V = 30VrJ 2.5 3.5 4.5 10 100 Rate Of Fall Of Forward Current - di/dt (A/µs)M axim um Re ve rse Re c ove ry Tim e - Trr (µs) I = 1000 A Square Pulse 500 A 250 A FM SD603C ..S20C Series T = 125 °C ; V = 30VrJ 2. 5 3. 5 10 100 Ra te O f Fa ll Of Forwa rd Current - di/d t (A/µs)Maximum Reverse Recovery Time - Trr (µs) I = 1000 A Sq uare Pu lse FM 500 A 250 A SD603C..S15C Series T = 125 °C; V = 30VrJ 100 110 120 130 140 150 10 20 30 40 50 60 70 80 90 100 M aximum Reverse Recovery Current - Irr (A) Rate Of Fall Of Forward Current - di/dt (A/µs) I = 1000 A Sq uare Pulse FM 500 A 250 A SD603C..S20C Series T = 125 °C; V = 30VrJ 100 110 120 130 140 10 20 30 40 50 60 70 80 90 100 M axim um Rev erse Re cov ery C urre n t - Irr (A ) Rate Of Fall Of Forward Current - di/dt (A/µs) I = 1000 A Squ are Pu lse FM 500 A 250 A SD603C ..S15C Series T = 125 °C ; V = 30VrJ Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E4 1 2 0.1 Pulse Basew idth (µs) Peak Forward Cur rent (A) dv/dt = 1000V/µs Sinusoid al Pulse 20 joules per pulse 0.4 0.2 0.04 0.02 0.01 SD603C..S10C Series T = 125 °C, V = 11 20VJ RR M tp 1E4 1 E1 1E2 1E3 1E4 0.1 Pulse Base w idth (µs) 20 jo ule s per p ulse 0.4 0.2 Trap ezoida l Pulse dv/dt = 1000V/µs; di/dt=50A/µs SD603C..S10C Series T = 125 °C, V = 1120VJ RRM tp 1E1 Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics

SD603C..C Series Bulletin I2068 rev. C 04/00 www.irf.com 1E1 1E2 1E3 1E4

1 E 11 E 21 E 31 E 4

0.1 Pulse Base w idth (µs) P e a k Fo rw ard C u rre n t (A ) dv/dt = 1000V/µs Sinusoidal Pulse 20 joul es per pulse 0.4 0.2 0.04 0.02 SD603C..S15C Series T = 125 °C, V = 1760VJ RR M tp 1E4 1 E1 1E2 1E3 1E4 Pulse Basew idth (µs) 20 joules per pulse 0.4 0.2 Tra pezoid al Pu lse dv/dt = 1000V/µs; di/dt=50A/µs SD603C..S15C Series T = 125 °C, V = 1760VJ RR M tp 1E1 Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics 1E1 1E2 1E3 1E4 P u lse B a se w id t h (µ s) 20 joules per pulse 0.4 Trap ezoidal Pu lse dv/dt = 1000V/µs; di/dt=50A/µs T = 125 °C, V = 1760V SD603C..S20C Series J RR M tp 1E1 1E1 1E2 1E3 1E4 1E1 1E2 1E3 1E 0.1 Pulse Basew idth (µs) Peak Forw ar d Current (A) dv/dt = 1000V/µs Sin u soid al Pu lse 2 0 jo ules pe r p ulse 0.4 0.2 0.04 SD603C..S 20C S eries T = 125 °C, V = 1760 VJ RR M tp 1E4 Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics