SD600N20PC

SD600N20PC THINKISEMI | Alldatasheet

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※ ThinkiSemi matured process rectifier diodes ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Excitation ※ High power drives/Medium traction applications Mechanical Data ※ Case: Hermetic metal cases with ceramic insulators ※ Polarity: Stud cathode and stud anode version Prefix "SD60 0N" =normal polarity (bottom stud cathode) ※ Mounting position: Any Prefix "SD600R" =reverse polarity ( bottom stud anode) Min T yp eM a x IF(AV) Maximum average forward current at case temperature 600 A IF(RMS) Maximum RMS forward current 940 A VRRM Repettive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM=VDRM&VRRM +200 V 150 2000 V IRRM Repetitive peak current VRRM 150 0.1 35 mA IFSM Surge forward current 10500 13600 A I tI t for fusing coordination 503 845 10 A s Rf1 Low level value of forward slo p e resistance (16.7 % x π x IF(AV) < I < π x IF AV )), TJ = TJ maximum 0.35 0.4 mΩ Rf2 High level value of forward slo p e resistance (I > π x IF(AV)), TJ = TJ maximum 0.31 0.38 mΩ VFM Peak forward voltage Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 150 1.31 1.44 V Rth(j-c) Maximum thermal resistance unction to case DC operation

0.1 K/W

resistance,case to heatsink Viso Isolation voltage 50Hz,R.M.S,t=1min, I iso:1mA(max) 3000 3300 V Not lubricated threads

50 Nꞏm

-55 200 ℃ Wt Approximate weight 454 580 g Outline UNITSYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) SD600N20PC/SD600R20PC VALUE 180° half sine wave 50Hz Single side cooled, Tc=120℃ 150 10ms half sine wave VR=0.6VRRM 150 150 K/W Fm ROTARY/ROTATING/ROTATION/STUD-TSB18 Rth(c-s) Mounting surface, smooth, flat and greased 0.04 Maximum allowed mounting torque +0 -20 % Pb Free Plating Product SD600N20PC/SD600R20PC Pb 300A Stud Version Standard Recovery Diode for Generator Exciter SD600N20PC/SD600R20PC © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/6Rev.14T TSB18

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/6Rev.14T Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 100 110 120 130 140 150 160 170 180 0 100 200 300 400 500 600 700 30° 60° 90° 120° 180° Average F orward Current (A) Conduction Angle Maximum Allowable Cas e T emperature (°C) R (DC) = 0.1 K/ W thJC S D600N/ R S eries (400V t o 2000V) 100 110 120 130 140 150 160 170 180 0 200 400 600 800 1000 30° 60° 90° 180° DC 120° Average F orwar d Current (A) Conduction P eriod Maximum Allowable Cas e T emperature (°C) R (DC) = 0.1 K/ W thJC S D600N/ R S eries (400V to 2000V) 100 110 120 130 140 150 0 100 200 300 400 500 600 700 30° 60° 90° 120° 180° Average F orwar d Curr ent (A) Conduction Angle Maximum Allowable Cas e T emperature (°C) S D600N/ R S eries (2500V to 3200V) R (DC) = 0.1 K/W thJC 100 110 120 130 140 150 0 200 400 600 800 1000 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction Period Maximum Allowable Cas e T emperature (°C) SD 6 0 0 N / R Se r i e s ( 2 5 0 0 V t o 3 2 0 0 V ) R (DC) = 0.1 K/ W thJC SD600N20PC/SD600R20PC

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/6Rev.14T Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Forward Power Loss Characteristics 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C)

1 K/W

R =0.02K/W -DeltaR thSA 0.04K/W 0.08K/W 0.1K/W 0.2K/W 0.4K/W

0.6 K/W

1.8 K/W

180° 120° 90° 60° 30° RM S Li m i t Conduction Angle Maximum Average F orward Power L os s (W) Average F orward Current (A) S D600N/ R S eries (400V to 2000V) T = 180°C J 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C)

1 K/ W

R =0.02K -DeltaR thSA 0.04K/W 0.08K/W 0.1K/W 0.2K/ W 0.4K/W

0.6 K/ W

1.8 K/ W

180° 120° 90° 60° 30° RM S Lim it Conduction P eriod Maximum Average F orward P ower L os s (W) Average F or ward Current (A) S D600N/ R S eries (400V to 2000V) T = 180°C J 25 50 75 100 125 150 Maximum Allowable Ambient T emperature (°C) R =0.02K/W -DeltaR thSA 0.04K/W 0.06 K/W

0.2 K/W

0.4 K/W

180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average F orward P ower L os s (W) Average F orward Current (A) S D600N/ R S eries (2500V to 3200V) T = 150°C J SD600N20PC/SD600R20PC

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/6Rev.14T Fig. 8 - Forward Power Loss Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current 25 50 75 100 125 150 Maximum Allowable Ambient T emperature (°C) R =0.02K/W-Delta R thSA

0.04 K/W

0.06K/W 0.1K/W 0.4K/ W 100 200 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 800 900 DC 180° 120° 90° 60° 30° RM S Lim it Conduction Period Maximum Average F orward P ower L os s (W) Average F or ward Curr ent (A) S D600N/ R S eries (2500V to 3200V) T = 150°C J 2000 4000 6000 8000 10000 12000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Pulses (N) P eak H alf S ine Wave F or ward Cur rent (A) At Any R ated L oad Condition And With R ated V Applied F ollowing S urge. RRM Initial T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J S D600N/ R S eries (400V to 2000V) 2000 4000 6000 8000 10000 12000 14000 0.01 0.1 1 P uls e T rain Duration (s ) Pe a k Ha lf Sin e Wa ve Fo rw a rd Curre n t ( A) Maximum Non R epetitive S urge Current Vers us Puls e T rain Duration. Initia l T = 180 °C N o Voltage R eapplied R ated V R eapplied RRM J SD 6 0 0 N / R Se r i e s (400V to 2000V) 2000 4000 6000 8000 10000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current P uls es (N) P eak H alf S ine Wave F orward Current (A) Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J SD 6 0 0 N / R Se r i e s (2500V to 3200V) At Any R ated Load Condition And With R ated V Applied F ollowing S ur ge. RRM 2000 4000 6000 8000 10000 12000 0.01 0.1 1 P uls e T rain Duration (s ) P eak H alf S ine Wave F orward Current (A) Initial T = 150 °C No Voltage R eapplied R ated V R eapplied J RRM Versus Puls e T rain Duration. SD 6 0 0 N / R Se r i e s (2500V to 3200V) Maximum Non Rep etitive S urge Current SD600N20PC/SD600R20PC

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/6Rev.14T Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics Fig. 15 - Thermal Impedance Z thJC Characteristics 100 1000 10000 01234 T = 2 5 ° C J Ins tantaneous F orward Voltage (V) Ins tantaneous F orward Current (A) T = 1 8 0 ° C J SD 6 0 0 N / R Se r i e s (400V to 2000V) 100 1000 10000 012345 T = 25 ° C J Ins tantaneous F or ward Voltage (V) Ins tantaneous F orward Current (A) T = 150°C J SD 6 0 0 N / R Se r i e s (2500V to 3200V) 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) thJC T rans i ent T her mal I mpedance Z (K /W) St e a d y St a t e V a l u e : R = 0.1 K/ W (DC Operation) thJC SD 6 0 0 N / R Se r i e s SD600N20PC/SD600R20PC

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 6/6Rev.14T TSB18 DIMENSIONS in millimeters (inches) 26 (1.023) MAX. 10.5 (0.41) DIA. 12 (0.47) MIN. 27.5 (1.08) MAX. 38 (1.5) DIA. MAX. Ceramic housing SW 45 C.S. 70 mm 21 (0.83) MAX. 3/4"-16UNF-2A * 115 (4.52) MIN. 245 (9.645) 255 (10.04) 80 (3.15) MAX. 47 (1.85) MAX. *For metric device: M24 x 1.5 - length 21 (0.83) MAX. contact factory SD600N20PC/SD600R20PC