SD57030 STMICROELECTRONICS | Alldatasheet

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Technical content

1/7March, 24 2003 SD57030 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

  • EXCELLENT THERMAL STABILITY
  • COMMON SOURCE CONFIGURATION
  • POUT = 30 W WITH 13 dB gain @ 945 MHz
  • BeO FREE PACKAGE

DESCRIPTION

The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2. Gate 3. Source M243 (Epoxy Sealed) ORDER CODE SD57030 BRANDING TSD57030 ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 65 V VDGR Drain-Gate Voltage (RGS = 1 MΩ) 65 V VGS Gate-Source Voltage + 20 V ID Drain Current 4 A PDISS Power Dissipation (@ Tc = 70°C) 74 W Tj Max. Operating Junction Temperature 200 °C TSTG Storage Temperature -65 to + 200 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.75 °C/W

ELECTRICAL SPECIFICATION (TCASE = 25°C) STATIC DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V I DS = 10 mA 65 V IDSS VGS = 0 V V DS = 28 V 1 µA IGSS VGS = 20 V V DS = 0 V 1 µA VGS(Q) VDS = 28 V ID = 50 mA 2.0 5.0 V VDS(ON) VGS = 10 V I D = 3 A 1.3 V G FS VDS = 10 V I D = 3 A 1.8 mho C ISS*V GS = 0 V V DS = 28 V f = 1 MHz 58 pF C OSS VGS = 0 V V DS = 28 V f = 1 MHz 34 pF C RSS VGS = 0 V V DS = 28 V f = 1 MHz 2.7 pF Symbol Test Conditions Min. Typ. Max. Unit POUT VDD = 28 V IDQ = 50 mA f = 945 MHz 30 W G PS VDD = 28 V IDQ = 50 mA P OUT = 30 W f = 945 MHz 13 15 dB ηD VDD = 28 V IDQ = 50 mA P OUT = 30 W f = 945 MHz 50 60 % Load mismatch V DD = 28 V IDQ = 50 mA P OUT = 28 W f = 945 MHz ALL PHASE ANGLES 10:1 VSWR Ref. 7143417B

Output Power vs. Input Power Pin, INPUT POW ER (W ) 40Pout, OUTPUT POWER (W) f= 945 MHz Vdd= 28 V Idq= 50 mA TYPICAL PERFORMANCE (CW) Power Gain and Efficiency vs. Output Power 0 5 10 15 20 25 30 35 40 Pout, OUTPUT POWER (W) 21Gp, POWER GAIN (dB) Nd, DRAIN EFFICIENCY (%) f= 945 MHz Vdd= 28 V Idq= 50 mA Gain Eff Output Power vs. Gate Source Voltage -5 -4 -3 -2 -1 0 1 2 3 4 Vgs, GATE-SOURCE VOLTAGE (V) 35Pout, OUTPUT POWER (W) f= 945 MHz Vdd= 28 V Idq= 50 mA Output Power vs. Supply Voltage 8 1 21 62 02 42 83 2 VDD, SUPPLY VOLTAGE (V) 35Pout, OUTPUT POWER (W) f= 945 MHz Idq= 50 mA Pin= .24 W Pin= .84 W Pin= .47 W

TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION C19 200 µF / 63V ALLUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR C18, C14 0.1 µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR C17 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C16, C12, C11,C1 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C15 10 µF / 50V ALUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR C13 100 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR C9, C2 0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR C8 6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C7, C6, C5 ,C4 10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C3 3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR R3 120 0-IM, 2W SURFACE MOUNT CERAMIC CHIP CAPACITOR R2 4.7 M OHM 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR R1 18 K OHM, 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR FB2, FB1 SHIELD BEAD SURFACE MOUNT EMI L2, L1 INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET WIRE PCB WOVEN FIBERGLASS REINFORCED PTFE 0.080’’ THK, εr=2.55, 2 Oz EDCu BOTH SIDE /c86 /c73/c78 /c82/c70 /c71/c71 /c43 /c43 /c79/c85/c84 /c82/c70 /c43 /c68 /c43 /c68/c86 NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES.

6.4 inches TEST CIRCUIT SD57030

Controlling dimension: Inches 1022142E M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA mm Inch MIN. TYP . MAX MIN. TYP. MAX A 5.21 5.72 0.205 0.225 B 5.46 6.48 0.215 0.255 C 5.59 6.10 0.220 0.240 D 14.27 0.562 E 20.07 20.57 0.790 0.810 F 8.89 9.40 0.350 0.370 G 0.10 0.15 0.004 0.006 H 3.18 4.45 0.125 0.175 I 1.83 2.24 0.072 0.088 J 1.27 1.78 0.050 0.070 DIM.

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