SD57030-01 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs n EXCELLENT THERMAL STABILITY n COMMON SOURCE CONFIGURATION n POUT = 30 W with 13 dB gain @ 945 MHz n BeO FREE PACKAGE

DESCRIPTION

The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity. PIN CONNECTION January 2000 ABSOLUTE MAXIMUM RATINGS (Tcase =2 5oC) Symbol Parameter Value Unit V (BR)DSS Drain Source Voltage 65 V V GS Gate-Source Voltage ± 20 V ID Drain Current 4 A P DISS Power Dissipation (@ Tc= 70oC) 74 W Tj Max. Operating Junction Temperature 200 oC TSTG Storage Temperature -65 to 150 oC THERMAL DATA R th(j-c) Junction-Case Thermal Resistance 1.75 oC/W M250 epoxy sealed ORDER CODE BRANDING SD57030-01 XSD57030-01 1. Drain 3.Source 2. Gate

ELECTRICAL SPECIFICATION (Tcase =2 5oC) STATIC Symbol Parameter Min. Typ. Max. Unit V (BR)DSS V GS =0 V I DS =1 0m A 65 V IDSS V GS =0 V V DS =2 8V 1 µ A IGSS V GS =2 0 V V DS =0V 1 µ A V GS(Q) V DS =2 8 V I D =5 0m A 2 . 0 5 . 0 V V DS(ON) V GS =1 0 V I D =3A 1 . 3 V gFS V DS =1 0 V I D =3A 1 . 8 m h o C ISS V GS =0 V V DS =2 8V f=1M H z 5 8 p F C OSS V GS =0 V V DS =2 8V f=1M H z 3 4 p F C RSS V GS =0 V V DS =2 8V f=1M H z 2 . 4 p F DYNAMIC Symbol Parameter Min. Typ. Max. Unit P OUT V DD = 28V f = 945 MHz I DQ =5 0m A 3 0 W G PS V DD =2 8V P out =3 0W I DQ =5 0m A 1 3 1 4 d B η D V DD =2 8V P out =3 0W I DQ =5 0m A 5 0 6 0 % Load Mismatch f = 945 MHz V DD =2 8V P out =3 0W I DQ =5 0m A ALL PHASE ANGLES 10:1 VSWR SD57030-01

TYPICAL PERFORMANCE (CW) Output Power vs Input Power Output Power vs Supply Voltage Power Gain and Efficiency vs Output Power Output Power vs Gate Source Voltage SD57030-01

945 MHz Test Circuit Schematic

+GV RF IN V D RF OUT + + D G +

945 MHz Test Circuit Component Part List

945 MHz Test Circuit Photomaster

945 MHz Test Fixture

DIM. mm inch A 5.21 5.71 0.205 0.225 B 2.16 2.92 0.085 0.115 C 5.59 6.09 0.220 0.240 D 8.89 9.40 0.350 0.370 E 9.40 9.91 0.370 0.390 F 0.11 0.15 0.004 0.006 G 0.89 1.14 0.035 0.045 H 1.45 1.70 0.057 0.067 I 2.67 3.94 0.105 0.155 1022729B M250 (.230 x .360 WIDE 2/L N/HERM PILL) MECHANICAL DATA Controlling Dimension : Inches SD57030-01

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com SD57030-01