RF power transistor the LdmoST family
Document overview
- Manufacturer or author: STMicroelectronics
- PDF pages: 14
Technical content
Datasheet sections
- 1 Electrical data
- 1.1 Maximum ratings
- 1.2 Thermal data
- 2 Electrical characteristics
- 2.1 Static
- 2.2 Dynamic
- 3 Impedance
- 4 Typical performance
- 5 Package mechanical data
- 6 Revision history
Features
■ Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 150W with 13dB gain @ 860MHz / 32V ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive
Description
The SD56150 is a common source N-channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56150 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity. Figure 1. Pin connection Table 1. Device summary
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (TCASE = 25°C) Table 3. Thermal data
2 Electrical characteristics
2.1 Static
2.2 Dynamic
Table 4. Static (per section)
- Includes Internal Input Moscap.
Table 5. Dynamic
3 Impedance
Figure 2. Current conventions Note: Measured drain to drain and gate to gate respectively. Table 6. Impedance data
4 Typical performance
Figure 3. Capacitance vs drain voltage Figure 4. Gate-source voltage vs case Figure 5. Drain current vs gate voltage Figure 6. Output power vs
Figure 10. Efficiency vs supply voltage Figure 11. Intermodulation distorsion vs
Figure 12. Test circuit schematic
Table 7. Test circuit component part list
5 Package mechanical data
Figure 15. Package dimensions Table 8. M252 (.400 x .860 4L BAL N/HERM W/FLG) mechanical data
6 Revision history
Table 9. Document revision history