SD56120 STMICROELECTRONICS | Alldatasheet
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Technical content
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ■ EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION, PUSH-PULL ■ POUT = 100 W PEP WITH 13 dB GAIN @ 860 MHz ■ BeO FREE PACKAGE
DESCRIPTION
The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. PIN CONNECTION November 1999 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol Parameter Value Unit V (BR)DSS Drain Source Voltage 65 V V GS Gate-Source Voltage ± 20 V ID Drain Current 14 A P DISS Power Dissipation (@ Tc= 70oC) 260 W Tj Max. Operating Junction Temperature 200 oC TSTG Storage Temperature -65 to 150 oC THERMAL DATA R th(j-c) Junction-Case Thermal Resistance 0.5 oC/W M246 epoxy sealed ORDER CODE BRANDING SD56120 XSD56120 1. Drain 4. Gate 2. Drain 5. Gate 3. Source
ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symbol Parameter Min. Typ. Max. Unit V (BR)DSS V GS = 0V IDS = 10 mA 65 V IDSS V GS = 0V VDS = 28 V 1 µ A IGSS V GS = 20V VDS = 0 V 1 µ A V GS(Q) V DS = 28V ID = 100 mA 3.0 5.0 V V DS(ON) V GS = 10V ID = 3 A 0.7 0.8 V G FS V DS = 10V ID = 3 A 3 mho C ISS V GS = 0V VDS = 28 V f = 1 MHz 88 pF C OSS V GS = 0V VDS = 28 V f = 1 MHz 44 pF C RSS V GS = 0V VDS = 28 V f = 1 MHz 1.7 pF DYNAMIC Symbol Parameter Min. Typ. Max. Unit P OUT V DD = 28V f = 860 MHz IDQ = 400 mA 100 W G PS V DD = 28 V Pout = 100W PEP IDQ = 400 mA 13 dB η D V DD = 28 V Pout = 100W PEP IDQ = 400 mA 30 36 % IMD V DD = 28 V Pout = 100W PEP IDQ = 400 mA 31 dB Load Mismatch f = 860 MHz VDD = 28 V Pout = 100W PEP IDQ = 400 mA ALL PHASE ANGLES 5:1 VSWR Note : f1 = 860 MHz f2 = 860.1 MHz SD56120
DIM. mm inch A 5.33 5.59 0.210 0.220 B 6.48 6.73 0.255 0.265 C 17.27 18.29 0.680 0.720 D 5.72 5.97 0.225 0.235 E 22.86 0.900 F 28.83 29.08 1.135 1.145 G 16.26 16.76 0.640 0.660 H 4.19 5.08 0.165 0.200 I 0.08 0.15 0.003 0.006 J 1.83 2.24 0.072 0.088 K 1.40 1.65 0.055 0.065 L 3.18 3.43 0.125 0.135 7145054A M246 (.230 x .650 WIDE 4/L BAL N/HERM W/FLG) MECHANICAL DATA Controlling dimension : Inches SD56120
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com SD56120