SD553C30S50L VISHAY | Alldatasheet
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Document Number: 93177 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 1 Fast Recovery Diodes (Hockey PUK Version), 560 A SD553C..S50L Series Vishay High Power Products
FEATURES
- High power FAST recovery diode series 6.0 µs recovery time High voltage ratings up to 4500 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 125 °C Lead (Pb)-free TYPICAL APPLICATIONS Snubber diode for GTO High voltage freewheeling diode Fast recovery rectifier applications ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IF(AV) 560 A DO-200AB (B-PUK) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IF(AV) 560 A Ths 55 °C IF(RMS) 1120 A Ths 25 °C IFSM
50 Hz 12 000
A
60 Hz 12 570
50 Hz 721
60 Hz 658
6.0 µs TJ 125 TJ - 40 to 125 VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = 125 °C mA SD553C..S50L 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600
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2 Revision: 14-May-08
SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at heatsink temperature IF(AV) 180° conduction, half sine wave Double side (single side) cooled 560 (210) A 55 (85) °C Maximum RMS forward current I F(RMS) 25 °C heatsink temperature double side cooled 1120 AMaximum peak, one-cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 12 000 t = 8.3 ms 12 570 t = 10 ms 50 % V RRM reapplied 10 100 t = 8.3 ms 10 570 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 721 kA2s t = 8.3 ms 658 t = 10 ms 50 % VRRM reapplied 510 t = 8.3 ms 466 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 7210 kA 2√s Low level value of threshold voltage V F(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.77 V High level value of threshold voltage V F(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.95 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.98 mΩ High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.89 Maximum forward voltage drop V FM Ipk = 1500 A, TJ =125 °C, tp = 10 ms sinusoidal wave 3.24 V RECOVERY CHARACTERISTICS CODE MAXIMUM VALUE AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES AT TJ = 125 °C trr AT 25 % IRRM (µs) Ipk SQUARE PULSE (A) dI/dt (A/µs) Vr (V) trr AT 25 % IRRM (µs) Qrr (µC) Irr (A) S50 5.0 1000 100 - 50 6.0 900 250 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ - 40 to 125 Maximum storage temperature range T Stg - 40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs DC operation single side cooled 0.073 K/W DC operation double side cooled 0.031 Mounting force, ± 10 % 14 700 (1500) N (kg) Approximate weight 255 g Case style Conforms to JEDEC DO-200AB (B-PUK) IFM trr dir dt IRM(REC) Qrr t
Document Number: 93177 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 3 SD553C..S50L Series Fast Recovery Diodes (Hockey PUK Version), 560 A Vishay High Power Products Note The table above shows the increment of thermal resistance R thJ-hs when devices operate at different conduction angles than DC Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.009 0.009 0.006 0.006 TJ = TJ maximum K/W 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 100 110 120 130 01 0 0 2 0 0 3 0 0 4 0 0 30° 60° 90° 120° 180° Average Forward Current (A) Maxi m um Al lowable Heatsink Temperat ure (° C) Conduction Angle SD553C ..S50L Seri es (Sin gle Side C ooled) R (DC ) = 0.073 K/W thJ-hs 100 110 120 130 0 100 200 300 400 500 600 30° 60° 90° 180° DC 120° Average Forward Current (A) Maxi m um Al l owable Heatsink Temperat ure (°C) Conducti on Per io d SD 553C ..S50L Series (Single Side C ooled) R (D C) = 0.073 K/W thJ-hs 100 110 120 130 0 100 200 300 400 500 600 700 800 30° 60° 90° 120° 180° Average Forward Current (A) Ma x i mu m A l l owa b l e H e at s i nk T e mp er a t u r e ( ° C) Conducti on Angle SD553C. .S50L Seri es (D oubl e Si de Cooled ) R (DC ) = 0.031 K/W thJ-hs 100 110 120 130 0 200 400 600 800 1000 1200 30° 60° 90° 180° DC 120° Average Forward Current (A) Maximum Allowable Heatsink Temperature (°C) Conducti on Peri od SD 553C..S50L Series (Double Side Cooled) R (DC) = 0.031 K/W thJ-hs
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SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 9 - Forward Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristic 250 500 750 1000 1250 1500 1750 2000 2250 2500 0 100 200 300 400 500 600 700 800 180° 120° 90° 60° 30° Average Forw ard Current (A) Max imum Av e ra ge F or war d Pow er Los s (W) RMS Limit Conduction Angle SD553C..S50L Series T = 125 °C J 500 1000 1500 2000 2500 3000 3500 0 200 400 600 800 1000 1200 DC 180° 120° 90° 60° 30° Average Forward Current (A) RMS Limit Maximum Average Forward Power Loss (W) Conducti on Peri od SD553C..S50L Series T = 125 °C J 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 001011 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pe a k H a lf S in e W a v e F o rw a rd C u rr e n t (A ) SD553C ..S50L Seri es In itia l T = 1 25 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s At Any Rat ed Load Condi ti on And Wi th 50% Rated V Applied Follow ing Surge RRM J 2000 4000 6000 8000 10000 12000 14000 11.010.0 Pul se Train Durat ion (s) Ma xi mum Non Rep eti ti ve S ur g e Cur r en t Peak Hal f Sine Wave Forward Current (A) SD553C.. S50L Series Initial T = 125°C No Vol t age R ea pp l i ed 50% Rated V Reappl ied Versus Pulse Train D uration. RRM J 100 1000 10000 1 . 522 . 533 . 544 . 55 T = 25°C J Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) T = 125 °C J SD553C..S50L Series 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 Square W ave Pulse D uratio n (s) thJ-hsTransien t Therm al Im pedan ce Z (K/W ) Ste ady State V alue R = 0.073 K/W (Single Side C ooled) R = 0.031 K/W (Dou bl e Si de Cool ed) (DC Operation) thJ-hs thJ-hs SD 553 C..S50 L Serie s
Document Number: 93177 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 5 SD553C..S50L Series Fast Recovery Diodes (Hockey PUK Version), 560 A Vishay High Power Products Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time Characteristics Fig. 13 - Recovery Charge Characteristics Fig. 14 - Recovery Current Characteristics Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics 100 150 200 250 300 350 400 0 200 400 600 800 1000 1200 1400 1600 1800 2000 Forward Recovery (V) T = 125°C T = 25 °C J J SD553C..S50L Series Rate Of Ri se Of Forward Current - di/dt (A/us) I V FP 4.5 5.5 6.5 7.5 8.5 9.5 10.5 10 100 1000 Rate Of Fall Of Forward Current - di/dt (A/µs)Maximum Reverse Recovery Time - Trr (µs) 500 A I = 15 00 A Sine Pulse 1000 A SD 553 C ..S50L Se rie s T = 125 °C; V > 100V J FM r 500 1000 1500 2000 2500 0 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/dt (A/µs) SD 553C ..S50L Series T = 1 25 °C ; V > 100V I = 15 00 A Sine Pulse FM 1000 A 500 A J r Maxim um Re ve rse Reco ve ry C h arge - Q rr ( µC ) 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 I = 1500 A Sine Pulse FM 1000 A 500 A Rate Of Fall Of Forward Current - di/dt (A/µs) M axim um Rev erse Rec ov ery Cu rrent - Irr (A ) SD 55 3C ..S50 L S er ies T = 1 25 °C ; V > 100V J r 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Peak Forward Current (A) 10 joules per pulse Sinusoid al Pulse SD553C..S50L Series 0.8 0.6 0.4 0.2 T = 1 25° C , V = 1500VJ RRM dv/ dt = 1000V/µs tp
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6 Revision: 14-May-08
SD553C..S50L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 560 A Fig. 16 - Frequency Characteristics Fig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 18 - Frequency Characteristics Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 20 - Frequency Characteristics 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) 50 Hz 200 10000 100 4000 dv/dt = 1000V/us 400 1000 2000 6000 Peak Forward Current (A) Sinusoid al Pulse SD55 3C..S50L Series 3000 1500 T = 55°C, V = 1500VC RR M tp 600 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Peak Forw ard Current (A) 10 jo ules per p ulse dv/dt = 1000V/µs T = 12 5°C, V = 1 500VJ RR M Sin usoid al Pu ls e 0.8 0.6 0.4 SD553C..S50L Series tp 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Trap ezoidal Pulse
50 H z
T = 5 5°C, V = 1500VRRM 6000 Peak Forward Current (A) SD 55 3C ..S50L S er ies dv/dt = 1000V/us, di/dt = 300A/us C tp 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) 10 jou les per pulse Tra pezoidal Pulse Peak Forward Current (A) T = 125 °C, V = 1500VJ RRM dv/dt = 100 0V/µs di/dt = 100A/µs 0.8 0.6 SD553C..S50L Series tp 0.4 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Tra pezoida l Pu lse T = 55 °C, V = 1500VRRM 6000 Peak Forward Current (A) SD553C.. S50L Series dv/dt = 1000V/us, di/dt = 100A/us C tp
Document Number: 93177 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 7 SD553C..S50L Series Fast Recovery Diodes (Hockey PUK Version), 560 A Vishay High Power Products ORDERING INFORMATION TABLE - Diode - Essential part number - 3 = Fast recovery - C = Ceramic PUK - Voltage code x 100 = V RRM (see Voltage Ratings table) -t rr code - L = PUK case DO-200AB (B-PUK) Device code 513 24 SD 55 3 C 45 S50 L LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.