SD553C IRF | Alldatasheet
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DISCRETE POWER DIODES and THYRISTORS DATA BOOK
SD553C..S50L SERIES FAST RECOVERY DIODES Hockey Puk Version 560A Bulletin I2092/B
Features
High power FAST recovery diode series 6.0 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 125°C Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics IF(AV) 560 A @ T hs 55 °C IF(RMS) 1120 A @ T hs 25 °C IFSM @ 50Hz 12000 A @ 60Hz 12570 A I2t @ 50Hz 721 KA 2s @ 60Hz 658 KA 2s VRRM range 3000 to 4500 V trr 6.0 µs @ T J 125 °C TJ - 40 to 125 °C Parameters SD553C..S50L Units case style DO-200AB (B-PUK)
SD553C..S50L Series D-680 Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max. Type number Code peak reverse voltage repetitive peak rev. voltage@ T J = 125°C V V mA 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 ELECTRICAL SPECIFICATIONS Voltage Ratings SD553C..S50L 75 Test conditions Max. values @ TJ = 125 °C Code (µs) (A) (A/µs) (V) (µs) (µC) (A) Recovery Characteristics S50 5.0 1000 100 - 50 6.0 900 250 Typical trr Ipk di/dt Vr trr Q rr Irr @ 25% IRRM Square Pulse @ 25% IRRM TJ = 25 oC IF(AV) Max. average forward current 560 (210) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C Double side (single side) cooled IF(RMS) Max. RMS forward current 1120 A @ 25°C heatsink temperature double side cooled IFSM Max. peak, one-cycle forward, 12000 t = 10ms No voltage non-repetitive surge current 12570 t = 8.3ms reapplied 10100 t = 10ms 50% V RRM 10570 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 721 t = 10ms No voltage Initial TJ = TJ max. 658 t = 8.3ms reapplied 510 t = 10ms 50% V RRM 466 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 7210 KA 2√s t = 0.1 to 10ms, no voltage reapplied V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage rf1 Low level value of forward slope resistance rf2 High level value of forward slope resistance V FM Max. forward voltage drop 3.24 V Ipk= 1500A, TJ = 125°C, tp = 10ms sinusoidal wave Parameter SD553C..S50L Units Conditions Forward Conduction KA 2s A V m Ω 0.89 (I > π x IF(AV)),TJ = TJ max. 0.98 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. 1.95 (I > π x IF(AV)),TJ = TJ max. 1.77 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
SD553C..S50L Series D-683 Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
SD553C..S50L Series D-684 Fig. 10 - Thermal Impedance ZthJ-hs CharacteristicFig. 9 - Forward Voltage Drop Characteristics Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time CharacteristicsFig. 13 - Recovery Charge CharacteristicsFig. 14 - Recovery Current Characteristics
SD553C..S50L Series D-685 Fig. 18 - Frequency CharacteristicsFig. 17 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 20 - Frequency CharacteristicsFig. 19 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 16 - Frequency Characteristics
SD553C..S50L Series D-681 TJ Max. junction operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 150 R thJ-hs Max. thermal resistance, 0.073 DC operation single side cooled junction to heatsink 0.031 DC operation double side cooled F Mounting force, ± 10% 14700 N (1500) (Kg) wt Approximate weight 255 g Case style DO-200AB (B-PUK) Conforms to JEDEC Parameter SD553C..S50L Units Conditions Thermal and Mechanical Specifications K/W 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 K/W 60° 0.020 0.020 0.021 0.021 30° 0.036 0.036 0.036 0.036 Conduction angle Units Conditions Single SideDouble Side Single SideDouble Side Sinusoidal conductionRectangular conduction ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - trr code 7 - L = Puk Case DO-200AB (B-PUK) SD 55 3 C 45 S50 L 1 2 3 4 5 6 7 Device Code Ordering Information Table
SD553C..S50L Series D-682 Outline Table Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics BOTH ENDS 0.8 (0.03) TWO PLACES 3.5(0.14) DIA. NOM. x 1.8(0.07) DEEP MIN. 34 (1.34) DIA. MAX. 58.5 (2.3 0) D IA . M A X . 26.9 (1.06) 25 .4 (1) BOTH ENDS 53 (2.09) DIA. MAX. Conforms to JEDEC DO-200AB (B-PUK) All dimensions in millimeters (inches)