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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High Surge Capability DO-5 Package
- Types up to 45 V VRRM
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage VRRM V RMS reverse voltage VRMS V DC blocking voltage VDC V 2. Reverse polarity (R): Stud is anode. SD51 (R) Conditions SD51 thru SD51R Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Silicon Power Schottky Diode DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage Thermal characteristics Thermal resistance, junction - case RthJC °C/W A 800TC = 25 °C, tp = 8.3 ms VR = 45 V, Tj = 25 °C IF = 60 A, Tj = 25 °C TC ≤ 100 °C Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM Reverse current IR VF -55 to 150 -55 to 150 SD51 (R) VR = 45 V, Tj = 125 °C mA V0.66 200 1.0 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. SD51 thru SD51R DO- 5 (DO-203AB) J K G F A E D P N B C M Inches Millimeters Min Max Min Max A 1/4 –28 UNF B 0.669 0.687 17.19 17.44 E 0.422 0.453 10.72 11.50 F 0.115 0.200 2.93 5.08 P 0.140 0.175 3.56 4.45 www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3