SD51 NAINA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
60 AMPERE
45 VOLTS
Switch mode Power Rectifier . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.State-of-the-art geometry features epitaxial construction with oside passivation and metal overlap contact. ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free whelling diodes, and polarity protection diodes. Extremely Low VF Low Power Loss/High Low Stored Charge, Majority Efficiency Carrier Conduction High Surge Capacity Mechnical Characteristics : Case Welded steel, hermetically seated Finish : All External Surtaces Corrosion Resistant and Terminal Lead is Readily Solderable Solder Heat : The excellent heat transfer property of the heavy duty copper anode terminal which transmits heat away from the die requires that caution be used when attaching wires. Stud Torque: 15 Ib-in max SD51 SCHOTTKY RECTIFIER MAXIMUM RATINGS Ratings Symbol SD51 UNIT Peak Repetitive Reverse Voltage VRRM 45 Volts Working Peak Reverse Voltage VRWM PC Blooking Voltage VR Nonrepetitive Peak Reverse Voltage VRSM 54 Volts Average Rectified Forward Current IO 60 Amps VR(equiv) £0.2 VR(dc).. TC=850C Ambient Temperature Rated VR(dc). PF(AV)= 0, RqJA=3.50C/W TA 90 0C Nonrepetitive Peak Surge Current IFSM 800 Amps (surge applied at rated load conditions, halfwave, for one cycle single phase, 60 Hz) Operating and Storage Junction Temperature Range T J, Tstg -65 TO +150 0C (Reverse voltage applied) Peak Operating Junction Temperature (Forward T J(pk) 150 0C Current Applied) THERMAL CHARACTERISTICS Characteristics Symbol Max Unit Thermal Resistance, Junction to case RqJC 1.0 0C/W ELECTRICAL CHARACTERISTICS (TC =250C unless otherwise noted) Maximum Instantaneous Forward Voltage (IF=30 Amps) VF 0.58 Volts ( IF=60Amps) 0.66 (IF=120 Amps) 0.86 Maximum Instantaneous Reverse Current @ 250 C 50 ma @125 0 C 125 ma I