SD5-1700-S025AB SMCDIODE | Alldatasheet

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Technical content

DataSheet D0337,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD5-1700-S025AB SD5-1700-S025AB SiCSchottkyPowerRectifierChip Parameter Symbol Value Units RepetitivePeakReverseVoltage VRRM 1700 V SurgePeakReverseVoltage VRSM 1700 V DCPeakBlockingVoltage VR 1700 V MaximumDCCurrent* IF 66 A RepetitivePeakForwardSurgeCurrent IFRM 168 A PeakOneCycleNon-RepetitiveSurgeCurrent IFSM 280 A OperatingJunctionandStorageTemperature TJ ,Tstg -55to+175 ˚C

Description

PartNumber DieSize Anode Cathode SD5-1700-S025AB 4.75mm*4.75mm Al Ag MaximumRatings:

  • 1700-VoltSchottkyRectifier
  • ZeroReverseRecovery
  • ZeroForwardRecovery
  • High-FrequencyOperation
  • Temperature-IndependentSwitchingBehavior
  • ExtremelyFastSwitching
  • PositiveTemperatureCoefficientonVF Vrrm=1700V IF=25A

DataSheet D0337,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD5-1700-S025AB * Pulsewidth<300µs, dutycycle<2% Parameter Typ. Unit DieSize 4.75*4.75 mm AnodePadopening 3.50*3.50 mm Thickness 350±25 μm AnodeMetalization(Al) 4 μm CathodeMetalization(Ag) 0.4 μm FrontsidePassivation Polyimide ElectricalCharacteristics(T=25℃ unlessotherwisespecified): Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @25A,Pulse,TJ =25C 1.55 1.8 V VF2 @25A,Pulse,TJ =175C 2.5 3.0 V ReverseCurrent* IR1 @VR =ratedVR,TJ =25C 1 10 uA IR2 @VR =ratedVR,TJ =175C 20 200 uA JunctionCapacitance CT VR=0V,TJ=25℃,f=1MHz 2252 - pF ReverseRecoveryCharge Qc IF =25A,di/dt=200A/μs,VR = 1700V,TJ =25°C 279 - nC CapacitanceStoredEnergy EC VR =1700V,TJ =25C 303 - μJ MechanicalParameters:

DataSheet D0337,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD5-1700-S025AB ChipDimension symbol Dimension+/-10% A 4.75mm B 4.75mm C 3.50mm D 3.50mm H 350um DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..