SD4931 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical data
  • 1.1 Maximum ratings
  • 1.2 Thermal data
  • 2 Electrical characteristics
  • 2.1 Static
  • 2.2 Dynamic
  • 3 Typical performance
  • 4 Package mechanical data
  • 5 Marking, packing an d shipping specifications
  • 6 Revision history

Features

■ Improved ruggedness V(BR)DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 150 W min. with 14.8 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

Description

The SD4931 is a N-channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 250 MHz. Figure 1. Pin connection M174 Epoxy sealed 1. Drain 2. Source 3. Gate 4. Source Table 1. Device summary

  1. For more details please refer to Chapter 5: Marking, packing and shipping specifications..

1 Electrical data

1.1 Maximum ratings

1.2 Thermal data

Table 2. Absolute maximum ratings (T CASE = 25°C) Table 3. Thermal data

2 Electrical characteristics

2.1 Static

2.2 Dynamic

Table 4. Static Table 5. Dynamic

3 Typical performance

Figure 2. Transient thermal impedance

Figure 3. Transient thermal impedance model

Figure 4. Power gain and efficiency vs output power_Vdd = 50 V, Idq = 250 mA Table 6. Vgs sort (@250 mA)

Table 6. Vgs sort (@250 mA) (continued)

4 Package mechanical data

specifications, grade definitions and product status are available at: www.st.com. Table 7. M174 (0.500 DIA 4/L N/HERM W/FLG) mechanical data

Figure 5. Package dimensions

5 Marking, packing and shipping specifications

Figure 6. Marking layout Table 8. Packing and shipping specifications Table 9. Marking specifications

6 Revision history

Table 10. Document revision history 17-Mar-2008 1 Initial release. 14-Jan-2010 2 Updated test conditions in Table 5: Dynamic.