SD4701 STMICROELECTRONICS | Alldatasheet

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CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .425 6LFL (M169) epoxy sealed .DESIGNED FOR CLASS AB LINEAR OPERATION .COMMON EMITTER .INTERNAL INPUT/OUTPUT MATCHING .26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN. .INHERENT RUGGEDNESS: LOAD MISMATCH TOLERANCE OF 5:1 MIN. VSWR 3 dB OVERDRIVE CAPABILITY

DESCRIPTION

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VCER Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 10 A PDISS Power Dissipation 145 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 1.2 °C/W SD4701 1. Collector 3. Emitter 2. Base THERMAL DATA May 1993 1/6

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. C OB f= 1 MHz V CB = 26 V For Information Only - This Device is Collector Matched —5 5— p F PIN f= 960 MHz V CE = 26 V I CQ = 200 mA P OUT = 45 W — 5 6.3 W POUT f= 960 MHz V CE = 26 V I CQ = 200 mA P IN = 6.3 W 45 55 — W G P f= 960 MHz V CE = 26 V I CQ = 200 mA P OUT = 45 W 8.5 9.5 — dB ηcf = 960 MHz V CE = 26 V I CQ = 200 mA P OUT = 45 W 50 55 — % Load Mismatch f= 960 MHz V CE = 26 V I CQ = 200 mA P OUT = 45 W VSWR = 5:1 MIN. @ All Phase Angles No Degradation in Device Performance OVD f = 960 MHz V CE = 26 V I CQ = 200 mA Set POUT = 45 W; Increase PIN 3dB No Degradation in Device Performance *IMD3 VCE = 26 V P OUT = 46.5 dBm (45.0W) PEP ICQ = 200 mA *Note: f1 = 900.00MHz @ 40.5dBm ** dBT, in dB, referenced to tone level f2 = 900.01MHz @ 40.5dBm STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 60 mA I E = 0m A 6 0 — — V BV CEO IC = 60 mA I B = 0m A 3 0 — — V BV CER IC = 60 mA R BE = 75 Ω 40 — — V BV EBO IE = 10 mA I C = 0m A 3 . 5 — — V ICER VCE = 26 V R BE = 75 Ω ——1 5 m A hFE VCE = 10 V I C = 1 A 15 — 100 — DYNAMIC SD4701

OUTPUT POWER (WATTS) POWER OUTPUT vs POWER INPUT VCE = 26V ICQ = 200mA 960MHz 910MHz 860MHz OUTPUT POWER (WATTS) POWER OUTPUT vs SUPPLY VOLTAGE PIN = 7W PIN = 10W FREQ = 960MHz ICQ = 200mA PIN = 6.3W OUTPUT POWER (WATTS) POWER OUTPUT vs FREQUENCY VCE = 26V ICQ = 200mA P IN = 10W PIN = 6.3W PIN = 7W POWER GAIN (dB) RL (-dB) COLLECTOR EFFICIENCY (%) BROADBAND PERFORMANCE R L PG ηC POUT = 45W VCE = 26V ICQ = 200mA SD4701

860 MHz

960 MHz

FREQ. Z IN (Ω )Z CL (Ω ) 860 MHz 5.20 + j 6.70 5.20 − j 4.45 870 MHz 5.15 + j 6.20 5.15 − j 4.50 880 MHz 5.05 + j 5.70 5.10 − j 4.55 890 MHz 5.00 + j 5.15 4.90 − j 4.80 900 MHz 4.95 + j 4.80 4.80 − j 5.10 915 MHz 4.95 + j 4.50 4.50 − j 5.20 930 MHz 4.95 + j 4.40 4.00 − j 4.90 945 MHz 4.90 + j 4.25 3.85 − j 4.65 960 MHz 4.80 + j 4.10 3.70 − j 4.35 VCE = 26V POUT = 45W ICQ = 200mA R L < 10dB SD4701

C1, C2 : 1.3 pF ATC 100B Chip Capacitor C3, C7 : 430 pF ATC 100B Chip Capacitor C4, C5 : 0.6 - 4.5 pF Johanson Variable Capacitor C6 : 0.7 pF ATC 100B Chip Capacitor C8 : 470 pF ATC 100B Chip Capacitor C9, C12 : 221 pF ATC 100B Chip Capacitor C10, C11 : 47 µF, 50V, Electrolytic Capacitor L1 : 5 Turns #22 AWG 0.16” I.D. 1T:1 Air Choke R1 + Fb : 11 Ω 1⁄8W Resistor + FB VK-200 R3 : 11 Ω 1⁄8W Resistor R4 : 100 Ω 1⁄8W Resistor P1 : 1k Ω , 1 Turn Potentiometer Board Material: 1 oz= 2 sides, Thickness 31.25 mils, Er= 2.55 TEST CIRCUIT TEST CIRCUIT PHOTOMASTER SD4701

Ref.: Dwg. No.12-0169 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD4701