SD4600 STMICROELECTRONICS | Alldatasheet
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CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS .438 x .450 2LFL (M173) epoxy sealed .GOLD METALLIZATION .860-960 MHz .26 VOLTS .EFFICIENCY 50% MIN. .P OUT = 60 W MIN. WITH 7.5 dB GAIN
DESCRIPTION
The SD4600 is designed for 960MHz mobile base stations in both analog and digital applications. Including double input and output matching net- works, the SD4600 features high impedances allowing operation over the full 860 to 960 MHz bandwidth. PIN CONNECTION BRANDING SD4600 ORDER CODE SD4600 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 28 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 8 A PDISS Power Dissipation 146 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 1.2 °C/W *Applies only to rated RF amplifier operation SD4600 1. Collector 3. Emitter 2. Base THERMAL DATA November 1992 1/4
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 960MHz V CC = 26V I CQ = .200A 60 65 — W ηcf = 960MHz V CC = 26V I CQ = .200A 50 58 — % G P f= 960MHz V CC = 26V I CQ = .200A 7.5 8.0 — dB VSWR f = 960MHz V CC = 26V 5:1 — — — STATIC (Total Device) Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 100mA 60 — — V BV EBO IE = 20mA 3.5 — — V BV CEO IC = 100mA 28 — — V ICEO VCE = 25V — — 30 mA hFE VCE = 5V I C = 3A 25 — 80 — DYNAMIC (Total Device) TYPICAL PERFORMANCE POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT FREQ = 960MHz VCC = 26V ICQ = 200mA POUT ηC SD4600
C1,C10 : 120pF Chip Capacitor B Size C2,C5 C11,C14: 470pF Chip Capacitor B Size C6,C7 : 100 µF Electrolytic Capacitor C8 : 4.7 µF Electrolytic Capacitor C9 : 10 µF Electrolytic Capacitor C15 : 39,000pF Chip Capacitor C16 : 63 µF Capacitor C17 : .6 - 4.5pF Johanson Variable Capacitor C18 : .8 - 8.0pF Johanson Variable Capacitor R1, R2 : 20 Ω (.5W) Chip Resistor R3 : 10K Potentiometer R4 : 4 3.17K Ω (.25W) Chip Resistor S1 : Teflon Glass Er = 2.33 H= .020 TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE ZCL ZIN H L H L POUT = 60W VCC = 26V Normalized to 50ohms IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) 8 6 0M H z 1 7+j1 0 1 1+j1 2 900 MHz 14 + j 10 10 + j 10.5 960 MHz 12.5 + j 8 8.5 + j 8.5 SD4600
Ref. Dwg. No.: 12-0173 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD4600