SD453R12S20PTC

SD453N12S20PC THINKISEMI | Alldatasheet

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※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Brushless Excitation ※ High power drives/Medium traction applications Mechanical Data ※ Case: Hermetic metal cases with ceramic insulators ※ Polarity: Stud cathode and stud anode version Prefix "SD45 3N"=normal polarity (bottom stud cathode) ※ Mounting position: Any Prefi x "SD453R"=reverse polarity (bottom stud anode) Min T yp eM a x IF(AV) Maximum average forward current at case temperature 400 450 A IF(RMS) Maximum RMS forward current 628 707 A VRRM Repettive peak reverse voltage VDRM&VRRM tp=10ms VDSM&VRSM=VDRM&VRRM +200V 150 1200 V IRRM Repetitive peak current VRRM 150 0.2 20 50 mA 50Hz t=10ms,none voltage reapplied to 100% VRRM applied 9300 9600 A 60Hz t=8.3ms,none voltage reapplied to 100% VRRM applied 9730 10050 A 50Hz t=10ms,none voltage reapplied to 100% VRRM applied 432 460 kA²s 60Hz t=8.3ms,none voltage reapplied to 100% VRRM applied 395 420 kA²s I √t Maximum I²√t for fusing t=0.1 thru 10ms,none voltage reapllied 279 326 kA²√s Rf1 Low level value of forward slo p e resistance (16.7 % x π x IF(AV) < I < π x IF AV , TJ = TJ maximum 0.6 0.8 mW Rf2 High level value of forward slo p e resistance (I > π x IF(AV)), TJ = TJ maximum 0.54 0.74 mW VFM Peak forward voltage Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 150 1.85 2.2 V Rth(j-c) Maximum thermal resistance, j unction to case DC operation 0.1 K/W Viso Isolation voltage 50Hz,R.M.S,t=1min, I iso:1mA(max) 3000 V Not lubricated threads 50 Nꞏm Lubricated threads Nꞏm Tstg Stored temperature -40 150 ℃ Wt Approximate weight 430 450 470 g Outline ROTARY/ROTATING/ROTATION/STUD-TSB-8(TSB-8T) Rth(c-s) Mounting surface, smooth, flat and greased 0.04 Maximum allowed mounting torque +0-20 % 180° half sine wave 50Hz Single side cooled, Tc=120℃ 150 150 K/W Fm IFSM Surge forward current I²t Maximum I²t for fusing Maximum thermal resistance,case to heatsink UNITSYMBOL CHARACTERISTIC TEST CONDITIONS Tj(℃) SD453N12S20PC/SD453R12S20PC SD453N12S20PSC/SD453R12S20PSC SD453N12S20PTC/SD453R12S20PTC SD453N12S20P(S,T)C/SD453R12S20P(S,T)C Pb Free Plating Product SD453N12S20P(S,T)C/SD453R12S20P(S,T)C Pb 400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/9Rev.13T

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/9Rev.13T Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics Fig. 6 - Forward Power Loss Characteristics 100 110 120 130 140 150 0 50 100 150 200 250 300 350 400 450 30° 60° 90° 120° 180° Aver age F orwar d Cur rent (A) Conduction Angle Maximum Allowable Cas e T emperature (°C) SD 4 5 3 N / R. . S2 0 Se r i e s R (DC) = 0.1 K/ W thJC 100 110 120 130 140 150 0 100 200 300 400 500 600 700 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction Period Maximum Allowable Cas e T emperature (°C) SD 4 5 3 N / R. . S2 0 Se r i e s R (DC) = 0.1 K/ W thJC 100 110 120 130 140 150 01 0 0 2 0 0 3 0 0 4 0 0 5 0 0 30° 60° 90° 120° 180° Average F orward Current (A) Conduction Angle Maximum All owable Cas e T emperature (°C) SD 4 5 3 N / R. . S3 0 Se r i e s R (DC) = 0.1 K/ W thJC 100 110 120 130 140 150 0 200 400 600 800 30° 60° 90° 180° DC 120° Average F orward Current (A) Conduction P eriod Maximum Allowable Cas e T emperature (°C) SD 4 5 3 N / R. . S3 0 Se r i e s R (DC) = 0.1 K/ W thJC 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 350 400 450 180° 120° 90° 60° 30° Average F orward Current (A) Maximum Average F orward P ower L os s (W) RM S Li m i t Conduction Angle SD 4 5 3 N / R. . S2 0 Se r i e s T = 150°C J 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 DC 180° 120° 90° 60° 30° Average F orward Current (A) RM S Lim i t Maximum Average F orward P ower L os s (W) Conduction P eriod SD 4 5 3 N / R. . S2 0 Se r i e s T = 150°C J SD453N12S20P(S,T)C/SD453R12S20P(S,T)C

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/9Rev.13T Fig. 7 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current 100 200 300 400 500 600 700 800 0 100 200 300 400 500 180° 120° 90° 60° 30° Average Forward Current (A) Maximum Average F orward P ower L os s (W) RM S Li m it Conduction Angle SD 4 5 3 N / R. . S3 0 Se r i e s T = 1 5 0 ° C J 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 DC 180° 120° 90° 60° 30° Average F orward Current (A) RM S Lim it Maximum Average F orward P ower L os s (W) Conduction Period SD 4 5 3 N / R. . S3 0 Se r i e s T = 1 5 0 ° C J 2000 3000 4000 5000 6000 7000 8000 9000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current P uls es (N) Peak Half Sine Wave Forwa rd Current (A) S D453N/ R..S 20 S eries Initia l T = 150 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any R ated L oad Condition And With R ated V Applied F oll owing S ur ge. RRM 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.01 0.1 1 Pulse Tra in Dura t io n (s) P eak H alf S ine W ave F orwar d Cur rent (A) Maximum Non R epetitive S urge Current S D453N/ R..S 20 S eries Vers us Pulse T rain Duration. Initial T = 150 °C No Voltage R eapplied R ated V R eapplied RRM J 2000 3000 4000 5000 6000 7000 8000 9000 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) Pea k Ha lf Sine W ave F or ward Cur rent (A ) Initial T = 150 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J SD 4 5 3 N / R. . S3 0 Se r i e s At Any R ated Load Condition And With R ated V Applied F ollowing S ur ge. RRM 2000 3000 4000 5000 6000 7000 8000 9000 10000 0.01 0.1 1 P uls e T rain Duration (s ) Pea k Ha lf S ine Wave F orward Current (A) Maximum Non R epetitive S urge Current S D453N/ R..S 30 S eries Vers us P uls e T rain Duration. Initia l T = 150 °C No Volta ge Reapplied R ated V R eapplied RRM J SD453N12S20P(S,T)C/SD453R12S20P(S,T)C

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/9Rev.13T Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics Fig. 15 - Thermal Impedance Z thJC Characteristic Fig. 16 - Typical Forward Recovery Characteristics Fig. 17 - Typical Forward Recovery Characteristics 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 T = 2 5 ° C J I ns tantaneous F orwar d Voltage (V) I ns tantaneous F orward Cur rent (A) T = 150°C J S D453N/ R ..S 20 S eries 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 T = 2 5 ° C J Ins tantaneous F orwar d Voltage (V) Ins tantaneous F orward Current (A) T = 150°C J S D453N/ R ..S 30 S eries 0.001 0.01 0.1 0.001 0.01 0.1 1 10 Sq u a r e W a v e Pu l se D u r a t i o n ( s) thJC T rans ient T hermal Impedance Z (K /W) S teady S tate Value: R = 0.1 K/ W (DC Operation) thJC S D453N/ R..S20/ S 30 S eries 100 0 400 800 1200 1600 2000 T = 2 5 ° C J Forwa rd Rec overy (V) T = 150°C J SD 4 5 3 N / R. . S2 0 Se r i e s R ate Of R is e Of F orward Current - di/dt (A/us ) I V FP 100 0 4 0 0 8 0 0 1 2 0 01 6 0 02 0 0 0 T = 2 5 ° C J Forward Rec overy (V) T = 1 5 0 ° C J SD 4 5 3 N / R. . S3 0 Se r i e s R ate Of R is e Of F or war d Cur rent - di/dt (A/us ) I V FP SD453N12S20P(S,T)C/SD453R12S20P(S,T)C

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/9Rev.13T Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics Fig. 21 - Recovery Time Characteristics Fig. 22 - Recovery Charge Characteristics Fig. 23 - Recovery Current Characteristics 2.5 3.5 4.5 5.5 10 100 1000 R ate Of F all Of F orward Current - di/dt (A/µs ) Maximum R evers e R ecovery T ime - T rr (µs ) 500 A 150 A I = 1000 A Si n e Pu l se FM SD 4 5 3 N / R. . S2 0 Se r i e s T = 150 °C; V > 100V J r 100 200 300 400 500 600 700 800 0 50 100 150 200 250 300 Maximum R evers e R ecovery Charge - Qrr (µC) R ate Of F al l Of F orwar d Cur rent - di /dt (A/µs ) 500 A 150 A I = 1000 A Si n e Pu l se FM SD 4 5 3 N / R. . S2 0 Se r i e s T = 150 °C; V > 100V J r 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 Maximum R evers e R ecovery Current - Irr (A) 500 A R ate Of F all Of F orward Current - di/dt (A/µs ) 150 A I = 1000 A Sine Pulse FM SD 4 5 3 N / R. . S2 0 Se r i e s T = 150 °C; V > 100V J r 2.5 3.5 4.5 5.5 6.5 10 100 1000 R ate Of F all Of F orward Current - di/dt (A/µs ) Maximum R evers e R ecovery T ime - T rr (µs ) 500 A 150 A I = 1000 A Si n e Pu l se FM S D453N/ R..S 30 S eries T = 150 °C, V > 100V J r 200 400 600 800 1000 1200 0 50 100 150 200 250 300 Maximum R evers e R ecovery Charge - Qrr (µC) R ate Of F al l Of F or war d Cur rent - di /dt (A/µs ) 500 A 150 A I = 1000 A Si n e Pu l se FM S D453N/ R..S 30 S eries T = 150 °C; V > 100V r J 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 Ma ximum Reverse Rec overy Current - Irr (A) 500 A R ate Of F al l Of F or war d Cur rent - di /dt (A/µs ) 150 A I = 1000 A Si n e Pu l se FM SD 4 5 3 N / R. . S3 0 Se r ie s T = 150 °C; V > 100V J r SD453N12S20P(S,T)C/SD453R12S20P(S,T)C

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 6/9Rev.13T Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 25 - Frequency Characteristics Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 27 - Frequency Characteristics Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics 1E 2 1E 3 1E 4 1E 1 1E 2 1E 3 1E 4 Pu lse Ba se w id t h ( µs) Peak Forward Current (A) 10 joules per p ulse d v/ d t = 1000V/ µs S inus oidal Puls e 0.6 0.4 0.2 0.1 SD 4 5 3 N / R. . S2 0 Se r i e s T = 150°C, V = 800V J RRM tp 1E2 1E3 1E4

1 E1 1 E2 1 E3 1 E4

Pulse Ba se w id t h ( µs) 50 Hz 200 10000 100 4000 dv/dt = 10 0 0V/us 400 1000 2000 6000 P eak F orward Current (A) Si n u so i d a l Pu l se 1500 3000 T = 70°C, V = 800V C RRM SD 4 5 3 N / R. . S2 0 Se r i e s tp 600 1E2 1E3 1E4 1E 1 1E2 1E 3 1E 4 Pulse Ba se w id t h ( µs) 1 0 joules per puls e T rapez oidal P uls e Peak Forward Current (A) 0.8 0.6 SD 4 5 3 N / R. . S2 0 Se r i e s T = 150°C, V = 800V J RRM dv/ dt = 1000V/ µs; d i/dt = 300A/µs tp 0.4 1E 2 1E 3 1E 4 1E 1 1E 2 1E 3 1E 4 Pulse Ba se w id t h (µs) Tr a p e zo i d a l Pu l se 50 Hz 100 200 400 1000 1500 2000 4000 3000 600 6000 Pea k Fo rw a rd Cu rren t ( A) SD 4 5 3 N / R. . S2 0 Se r ie s T = 70°C, V = 800V dv/dt = 1 0 0 0 V/us , d i/ d t = 300A/ us RRM C tp 1E 2 1E 3 1E 4 1E 1 1E 2 1E 3 1E 4 Pulse Ba se w id t h (µs) 10 joules per puls e T rapez oidal P uls e P eak F orward Current (A) 0.6 0.4 SD 4 5 3 N / R. . S2 0 Se r i e s dv/dt = 1 0 00V/µs d i/ d t = 100A/ µs T = 1 5 0 ° C , V = 8 0 0 V J RRM tp 0.2 1E 2 1E 3 1E 4 1E 1 1E2 1E 3 1E 4 Pu lse Ba se w id t h ( µ s) Tr a p e zo i d a l Pu l se 50 Hz 100 200 400 1000 1500 2000 4000 3000 600 6000 Peak Forward Current (A) T = 70°C, V = 800V dv/dt = 1 0 0 0V/us , d i/ d t = 100A/ us RRM C S D453N/ R..S 20 Series tp SD453N12S20P(S,T)C/SD453R12S20P(S,T)C

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 7/9Rev.13T Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 35 - Frequency Characteristics 1E 2 1E 3 1E 4 1E 1 1E 2 1E 3 1E 4 Pulse Ba se w id t h (µs) Pe a k Forw a rd Curre n t ( A) 10 jo ules p er p ulse dv/dt = 1 0 00V/µs S inus oidal Pulse 0.8 0.6 0.4 0.2 S D453N/ R...S 30 S eries T = 150°C, V = 800V J RRM tp 0.1 1E 2 1E 3 1E 4 Pulse Ba se w id t h (µs) 50 Hz 200 100 4000 dv/dt = 1 0 00V/us 400 1000 2000 6000 Pe a k Fo rwa rd Cu rre n t ( A) Si n u so i d a l Pu l se 1500 3000 SD 4 5 3 N / R. . S3 0 Se r i e s 6000 T = 70°C, V = 800V RRM C tp 1E 2 1E 3 1E 4 1E 1 1E 2 1E 3 1E 4 Pulse Ba se w id t h (µs) 1 0 joules per puls e T rapez oidal P uls e Peak Forward Current (A) 0.8 S D453N/ R..S 30 S eries T = 150°C, V = 800V J RRM 0.6 d v/ d t = 1000V/ µs; d i/ d t = 300A/ µs tp 1E2 1E3 1E4 Pulse Ba se w id t h (µs) Tr a p e z o i d a l P u l se 50 Hz 100 200 400 1000 2000 4000 3000 600 Peak Forwa rd Current (A) dv/dt = 1000V/us , di/dt = 300 A/us T = 70°C, V = 800V SD 4 5 3 N / R. . S3 0 Se r i e s RRM tp 1E 2 1E 3 1E 4

1 E 11 E 21 E 31 E 4

Pulse Ba se w id t h ( µs) 1 0 joules per puls e T rapez oidal P uls e P eak F orward Cur rent (A) SD 4 5 3 N / R. . S3 0 Se r i e s T = 1 5 0 ° C , V = 8 0 0 V J RRM 0.8 0.6 dv/ dt = 1000V/ µs; di/ d t = 100A/ µs tp 0.4 1E2 1E3 1E4 1E 1 1E 2 1E 3 1E 4 Pulse Ba se wid th (µs) Tra p e zo i d a l Pu l se 50 Hz 100 200 400 1000 1500 2000 4000 3000 600 P eak F orwar d Curr ent (A) SD 4 5 3 N / R. . S3 0 Series T = 70°C, V = 800V dv/dt = 1000V/us , di/ d t = 100A/ us C RRM tp SD453N12S20P(S,T)C/SD453R12S20P(S,T)C

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 8/9Rev.13T Ordering Information Table SD 45 3 N 25 S30 P S C 2 3 Device Code 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - N = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) 5 - Voltage code: Code x 100 = V RRM (25=2500V,20=2000V,16=1600V,12=1200V) 6 -t rr 7 - P =Stud base TSB-8 3/4" 16UNF-2A M =Stud base TSB-8 M24 X 1.5 8 -7 S = Isolated lead with silicone sleeve (Red = Reverse Polarity; Blue = Normal Polarity) None = Not isolated lead T = Threaded Top Terminal 3/8" 24UNF-2A 9 - C = Ceramic housing code (S30=3us,S20=2us) SD453N12S20P(S,T)C/SD453R12S20P(S,T)C

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 9/9Rev.13T Case Style TSB-8 All dimensions in millimeters (inches) Case Style TSB-8T with top thread terminal 3/8" All dimensions in millimeters (inches) 47 (1.85) 80.5 (3.17) 38 (1.5) DIA. MAX. MAX. MAX. MAX. CERAMIC HOUSING SW 45 * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX. 21 (0.83) 3/4"-16UNF-2A * 25 (0.98) 3/8"-24UNF-2A 17 (0.67) DIA. 26 (1.023) MAX. 47 (1.85) MIN. 38 (1.5) DIA. MAX. 245 (9.645) 255 (10.04) MAX. MAX. CERAMIC HOUSING SW 45 * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX. C.S. 70mm 80 (3.15) MAX. 21 (0.83) MA X. 3/4"-16UNF-2A * SD453N12S20P(S,T)C/SD453R12S20P(S,T)C