SD453N IRF | Alldatasheet
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DISCRETE POWER DIODES and THYRISTORS DATA BOOK
FAST RECOVERY DIODES Stud Version 400A 450A Bulletin I2076/A
Features
High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Compression bonded encapsulation Stud version case style B-8 Maximum junction temperature 150°C Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications IF(AV) 400 450 A @ T C 70 70 °C IF(RMS) 630 710 A IFSM @ 50Hz 9300 9600 A @ 60Hz 9730 10050 A V RRM range 1200 to 25001200 to 2500 V trr 2.0 3.0 µs @ T J 25 25 °C TJ - 40 to 150 °C Parameters UnitsSD453N/R S20 S30 Major Ratings and Characteristics case style B-8
Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max. Type number Code peak reverse voltage repetitive peak rev. voltage@ T J = TJ max. V V mA 12 1200 1300 16 1600 1700 20 2000 2100 25 2500 2600 ELECTRICAL SPECIFICATIONS Voltage Ratings SD453N/R 50 SD453N/R S20 S30 IF(AV) Max. average forward current 400 450 A 180° conduction, half sine wave @ case temperature 70 70 °C IF(RMS) Max. RMS forward current 630 710 A @ case temperature 55 52 °C IFSM Max. peak, one-cycle forward,9300 9600 t = 10ms No voltage non-repetitive surge current 9730 10050 t = 8.3ms reapplied 7820 8070 t = 10ms 100% V RRM 8190 8450 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 432 460 t = 10ms No voltage Initial TJ = TJ max. 395 420 t = 8.3ms reapplied 306 326 t = 10ms 100% V RRM 279 297 t = 8.3ms reapplied I2√ t Maximum I2√t for fusing 4320 4600 KA 2√s t = 0.1 to 10ms, no voltage reapplied V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage rf1 Low level value of forward slope resistance rf2 High level value of forward slope resistance V FM Max. forward voltage drop 2.20 1.85 V Ipk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave Parameter Units Conditions Forward Conduction A KA 2s 1.09 1.04 (I > π x IF(AV)),TJ = TJ max. 1.00 0.95 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. 0.74 0.54 (I > π x IF(AV)),TJ = TJ max. 0.80 0.60 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.m Ω V typical trr Ipk di/dt Vr trr Q rr Irr @ 25% IRRM Square Pulse @ 25% IRRM Code (µs) (A) (A/µs) (V) (µs) (µC) (A) Test conditions Max. values @ TJ = 150 °C Recovery Characteristics TJ = 25 oC S20 2.0 1000 50 - 50 3.5 250 120 S30 3.0 1000 50 - 50 5.0 380 150
Fig. 6 - Forward Power Loss CharacteristicsFig. 5 - Forward Power Loss Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 9 - Maximum Non-repetitive Surge Current Fig. 10 - Maximum Non-repetitive Surge Current Fig.12 - Maximum Non-repetitive Surge CurrentFig.11 - Maximum Non-repetitive Surge Current Fig. 8 - Forward Power Loss CharacteristicsFig. 7 - Forward Power Loss Characteristics
Fig. 15 - Thermal Impedance ZthJC Characteristic Fig. 16 - Typical Forward Recovery Characteristics Fig. 17 - Typical Forward Recovery Characteristics Fig. 14 - Forward Voltage Drop CharacteristicsFig. 13 - Forward Voltage Drop Characteristics
Fig. 25 - Frequency CharacteristicsFig. 24 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 23 - Recovery Current CharacteristicsFig. 22 - Recovery Charge CharacteristicsFig. 21 - Recovery Time Characteristics Fig. 18 - Recovery Time CharacteristicsFig. 19 - Recovery Charge CharacteristicsFig. 20 - Recovery Current Characteristics
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 27 - Frequency Characteristics
Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 35 - Frequency Characteristics Fig. 33 - Frequency CharacteristicsFig. 32 - Maximum Total Energy Loss Per Pulse Characteristics
TJ Max. junction operating temperature range -40 to 150 Tstg Max. storage temperature range -40 to 150 R thJC Max. thermal resistance, junction to case 0.1 DC operation R thCS Max. thermal resistance, case Mounting surface, smooth, flat and to heatsink greased T Mounting torque, ± 10% 50 Nm Not lubricated threads wt Approximate weight 454 g Case style B - 8 See Outline Table 0.04 Parameter Units Conditions K/W Thermal and Mechanical Specifications SD453N/R S20 S30 120° 0.014 0.014 0.014 0.014 90° 0.017 0.017 0.019 0.019 K/W 60° 0.025 0.025 0.026 0.026 30° 0.042 0.042 0.042 0.042 Conduction angle Units Conditions S20 S30 S20 S30 ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Sinusoidal conductionRectangular conduction Ordering Information Table SD 45 3 N 25 S30 P S C 1 2 3 4 5 6 7 Device Code 8 9 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - N = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) 5 - Voltage code: Code x 100 = VRRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - P = Stud base B-8 3/4" 16UNF-2A M = Stud base B-8 M24 X 1.5 8 -7 S = Isolated lead with silicone sleeve (Red = Reverse Polarity; Blue = Normal Polarity) None = Not isolated lead T = Threaded Top Terminal 3/8" 24UNF-2A 9 - C = Ceramic housing
All dimensions in millimeters (inches) Case Style B-8 with top thread terminal 3/8" All dimensions in millimeters (inches) 26 (1.023) MAX. 38 (1.5) DIA. MAX. CERAMIC HOUSING SW 45 C.S. 70mm 3/4"-16UNF-2A * * FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX. 38 (1.5) DIA. MAX. CERAMIC HOUSING SW 45 3/4"-16UNF-2A * 3/8"-24UNF-2A 17 (0.67) DIA. * FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.