SD41_18 GENESIC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High Surge Capability DO-4 Package
- Types up to 45 V VRRM
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Repetitive peak reverse voltage VRRM V RMS reverse voltage VRMS V DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage Thermal characteristics Thermal resistance, junction - case RthJC °C/W 0.68 1.5 600 -55 to 150 -55 to 150 VR = 35 V, Tj = 125 °C mA V0.68 1.5 1.5 VR = 35 V, Tj = 25 °C IF = 30 A, Tj = 25 °C 1.5 Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM -55 to 150 -55 to 150 SD4145 (R)SD41 (R) 30TC ≤ 100 °C SD41 thru SD4145R Silicon Power Schottky Diode 2. Reverse polarity (R): Stud is anode. A Conditions TC = 25 °C, tp = 8.3 ms SD41 (R) 600 Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Reverse current IR VF SD4145 (R) C A A C Stud Stud (R) C A A C Stud Stud (R) Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 DO- 4 (DO-203AA) J G F A E D P N B C M 1Oct. 2018 http://www.diodemodule.com/silicon_products/studs/sd41.pdf
C A A C Stud Stud (R) C A A C Stud Stud (R) Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 DO- 4 (DO-203AA) J G F A E D P N B C M 2Oct. 2018 http://www.diodemodule.com/silicon_products/studs/sd41.pdf
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. SD41 thru SD4145R C A A C Stud Stud (R) C A A C Stud Stud (R) Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 DO- 4 (DO-203AA) J G F A E D P N B C M 3Oct. 2018 http://www.diodemodule.com/silicon_products/studs/sd41.pdf