SD4010 STMICROELECTRONICS | Alldatasheet
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UHF TV LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .425 4LFL (M119) hermetically sealed .470-860 MHz .26.5 VOLTS .GOLD METALLIZATION .P OUT = 20.0W MIN. WITH 9.5 dB GAIN .INTERNAL INPUT MATCHING .DIFFUSED EMITTER BALLAST RESISTORS
DESCRIPTION
The SD4010 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors. The SD4010 is intended for use in linear applications up to 1GHz, including UHF television transmitters, transposers and cellular base sta- tions. PIN CONNECTION BRANDING SUTV200 ORDER CODE SD4010 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60.0 V VCES Collector-Emitter Voltage 60.0 V VEBO Emitter-Base Voltage 4.0 V IC Device Current (Maximum) 11.0 A PDISS Power Dissipation 88.8 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 1.9 °C/W SD4010 1. Collector 3. Emitter 2. Base THERMAL DATA November 1992 1/5
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 860MHz V CE = 26.5V P IN = 2.2W 20.0 28.0 — W G P f= 860MHz V CE = 26.5V P OUT = 20W 9.5 10.5 — dB IMD 3 PSYNC = 20W V CE = 26.5V (note 1) — −48 −46 dBc IP3 VCB = 26.5V P OUT = 20W PEP (note 2) — 55 — dBm C OB f= 860MHz V CB = 26.5V (note 3) — 25 36 pF Load* Mismatch f= 860MHz V CE = 26.5V P OUT = 20W 3:1 10:1 — VSWR ICQ = IC = 2.7A (1.35A per Side) *VSWR tested for a minimum of 3:1 SWR at all phase angles. Note 1: Three Tone IMD Testing (CCIR) f1 = 860.0MHz/ −8dB ref. to PSYNC - Visual f2 = 863.5MHz/ −16dB ref. to PSYNC - Color Subcarr ier f3 = 864.5MHz/ −7dB ref. to PSYNC - Aural STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV EBO IE = 10mA I C = 0mA 3.0 4.0 — V BV CES IC = 50mA V BE = 0V 60.0 85.0 — V BV CEO IC = 50mA I B = 0mA 28.0 30.0 — V ICEO VCE = 26.5V I E = 0mA — — 5 mA hFE VCE = 5V I C = 3A 25 50 80 — Tested Per Side DYNAMIC TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER OUTPUT & POWER GAIN vs TOTAL COLLECTOR CURRENT Note 2: IP3 Calculated Based on Two-Tone IMD Testing: f1 = 900.0 MHz/ −6dB ref. to POU T f2 = 900.1 MHz/ −6dB ref. to POU T IMD 3 (Typ) < −36dBc Note 3: Tested Per Side SD4010
Balun 1, 2 : 50Ω Coaxial Cable,λ/4 @ 860 MHz C1, C4, C11, C16 : 100µF, 50V Electrolytic C2, C5, C12, C15 : 10µF, 35V Tantalum C3, C6, C7 C8, C19, C20 : 75 pF Ceramic Chip, ATC B C9, C18 : 0.4 - 2.5 pF Variable, JOHANSON Giga-trim C10 : 2pF Ceramic Chip, ATC B C17 : 5pF Ceramic Chip, ATC B L1, L2 : 7 Turns, 0.12” I.D., #22 AWG (1:1) L3, L4 : 5 Turns, 0.12” I.D., #22 AWG (1:1) See Photomaster for Microstrip Lines Board Material: ROGERS Ultra-Lam Er = 2.55, Height= 0.030”, 2 oz. Cu. TYPICAL PERFORMANCE (cont’d) INTERMODULATION DISTORTION vs POWER OUTPUT SD4010
PHOTOMASTER OF TEST CIRCUIT SD4010
Ref. Dwg. No.: 12-0119 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD4010