SD4-1200-S002AB SMCDIODE | Alldatasheet

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DataSheet D0315,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD4-1200-S002AB SD4-1200-S002AB SiCSchottkyPowerRectifierChip Parameter Symbol Value Units RepetitivePeakReverseVoltage VRRM 1200 V SurgePeakReverseVoltage VRSM 1200 V DCPeakBlockingVoltage VR 1200 V MaximumDCCurrent IF 2 A Non-RepetitiveForwardSurgeCurrent IFSM 44 A OperatingJunctionandStorageTemperature TJ ,Tstg -55to+175 ˚C MaximumProcesingTemperature TProc 325 ˚C

Description

PartNumber DieSize Anode Cathode SD4-1200-S002AB Pleasecontactyoursalesrepresentative togetthedetailedinformationaboutdie layoutanddimensions. Al Ag MaximumRatings:

  • 1200-VoltSchottkyRectifier
  • ZeroReverseRecovery
  • ZeroForwardRecovery
  • High-FrequencyOperation
  • Temperature-IndependentSwitchingBehavior
  • ExtremelyFastSwitching
  • PositiveTemperatureCoefficientonVF VRRM = 1200V IF = 2A

DataSheet D0315,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD4-1200-S002AB Parameter Symbol Condition Typ. Max. Units DCForwardVoltage VF IF =2A,TJ=25°C 1.5 1.8 V IF =2A,TJ=175°C 1.9 2.5 V ReverseCurrent IR VR =1200V,TJ=25°C 1 25 uA VR =1200V,TJ=175°C 20 35 uA JunctionCapacitance CT VR=0V,TJ=25℃,f=1MHz 160 - CT ReverseRecoveryCharge Qc IF =2A,di/dt=200A/μs VR =800V,TJ =25°C 12.33 - Qc CapacitanceStoredEnergy EC VR =800V,TJ =25°C 6.33 - EC * Pulsewidth<300µs, dutycycle<2% Parameter Typ. Unit DieSize 1.20×1.20 mm AnodePadopening 0.75×0.75 mm Thickness 350±10% μm WaferSize 152.4 mm AnodeMetalization(Al) 4 μm CathodeMetalization(Ag) 0.4 μm FrontsidePassivation Polyimide ElectricalCharacteristics(T=25℃ unlessotherwisespecified): MechanicalParameters:

DataSheet D0315,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD4-1200-S002AB Dimension symbol Dimension +/-10% A 1.20mm B 1.20mm C 0.75mm D 0.75mm H 350um DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..