SD394-70-72-591 ADVANCEDPHOTONIX | Alldatasheet

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Technical content

FEATURES DESCRIPTION APPLICATIONS

  • Low noise
  • Small size
  • High Speed
  • Low cost SYMBOL PARAMETER MIN MAX UNITS M Gain 350 TSTG Storage Temperature -55 +70 °C TO Operating Temperature +1 +40 °C TS Soldering Temperature* +240 °C VTEC TEC voltage 4.3 V ITEC TEC Current 2.0 A P APD Die Power Diss. 0.2 W SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID Dark Current 15 35 nA CJ Junction Capacitance f = 1 MHz 50 pF IN Noise Current Spectral Density f = 100 kHz 1.5 2.5 pA/√Hz lrange Spectral Application Range Spot Scan 350 1050 nm R Responsivity l= 750 nm, VR = 0 V 135 A/W Vop Operating voltage 1700 2000 V tr Response Time** RL = 50 Ω, l= 675nm 12 18 nS IQTEC TEC Quiescent Current Case Temp = 35 °C 0.95 A SPECTRAL RESPONSE M = 300 100 120 140 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050Wavelength (nm) Responsivity (A/W) 100 120 140 Cooled Large Area Red Silicon Avalanche Photodiode SD 394-70-72-591 The SD 394-70-72-591 is a cooled large area silicon avalanche photodiode (APD) that provides high gain and low noise, in a hermetic TO-3 package.
  • Military
  • Industrial
  • Medical * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED **Response time of 10% to 90% is specified at 675nm wavelength light. All specifications are with the APD internally cooled to 0°C and a gain of 300. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SCHEMATIC Mechanical Dimension in inches QE R