SD3931-10 STMICROELECTRONICS | Alldatasheet

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Technical content

May, 27 2003 SD3931-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

  • GOLD METALLIZATION
  • EXCELLENT THERMAL STABILITY
  • COMMON SOURCE CONFIGURATION
  • POUT = 150 W MIN. WITH 21.7 dB GAIN @

150 MHz

DESCRIPTION

The SD3931-10 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 100 V dc large signal applications up to 150 MHz. PIN CONNECTION 1. Drain 2. Source 3. Gate 4. Source M174 epoxy sealed ORDER CODE SD3931-10 BRANDING SD3931-10 ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 250 V VDGR Drain-Gate Voltage (RGS = 1MΩ ) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current 10 A PDISS Power Dissipation 437 W Tj Max. Operating Junction Temperature 200 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.4 °C/W

ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit V(BR)DSS VGS = 0 V I DS = 100 mA 250 V IDSS VGS = 0 V V DS = 100 V 5m A IGSS VGS = 20 V V DS = 0 V 5 µA VGS(Q) VDS = 10 V I D = 250 mA 1.5 4.0 V VDS(ON) VGS = 10 V I D = 5 A 5V G FS VDS = 10 V I D = 2.5 A 3 mho C ISS VGS = 0 V V DS = 100 V f = 1 MHz 649 pF C OSS VGS = 0 V V DS = 100 V f = 1 MHz 134 pF C RSS VGS = 0 V V DS = 100 V f = 1 MHz 6p F Symbol Test Conditions Min. Typ. Max. Unit POUT VDD = 100 V IDQ = 0.2 A f = 150 MHz 150 W G PS VDD = 100 V IDQ = 0.2 A POUT = 150 W f = 150 MHz 21.7 dB ηD VDD = 100 V IDQ = 0.2 A POUT = 150 W f = 150 MHz TBD % Load Mismatch VDD = 100 V IDQ = 0.2 A POUT = 150 W f = 150 MHz All Phase Angles 10:1 VSWR IMPEDANCE DATA FREQ. MHz ZIN (Ω )Z DL (Ω ) 150 0.42 - j 3.1 3.4 + j 5.5 Typical Input Impedance Typical Drain Load Impedance G D S ZDL Zin IMPEDANCES SCHEME

Power Gain Vs Output Power f =150 MHz Vds=100 V 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 0 50 100 150 200 250 Pout (W) Gp (dB) Idq = 0.1 A Idq = 1 A Idq = 0.2 A Idq = 0.3 A Idq = 0.5 A TYPICAL PERFORMANCE Input Return Loss Vs Output Power f =150 MHz Vds = 100 V -20 -15 -10 0 50 100 150 200 250 Pout (W) RL (dB) Idq = 1 A Idq = 0.2 A Efficiency Vs Output Power f =150 MHz Vds = 100 V 0 50 100 150 200 250 Pout (W) nd (%) Idq = 0.2 A Idq = 1 A Output Power Vs Input Power f =150 MHz Vds = 100 V 100 150 200 250 Pin (W) Pout (W) Idq = 0.2 A Idq = 1 A Drain Current Vs Gate-Source Voltage Vds = 16 V 01234567 Vgs (V) Ids (A)

1011000DControlling Dimension in Inches M174 (.500 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm Inch MIN. TYP . MAX MIN. TYP. MAX A 5.56 5.584 0.219 0.230 B 3.18 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 0.980 G 12.57 12.83 0.495 0.505 H 0.08 0.18 0.003 0.007 I 2.11 3.00 0.083 0.118 J 3.81 4.45 0.150 0.175 K 7.11 0.280 L 25.53 26.67 1.005 1.050 M 3.05 3.30 0.120 0.130 DIM.

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