SD36C

SD36C SMCDIODE | Alldatasheet

Document overview

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• PDF pages: 6

Technical content

DataSheetN2250,Rev.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD05CTHRUSD36C SD05CTHRUSD36CTVSARRAY Schematic&PinConfiguration

Description

 350Wattspeakpulsepower(tp=8/20μs)  Transientprotectionfordatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)24A(8/20μs)  Smallpackageforuseinportableelectronics  SuitablereplacementforMLV’sinESDprotection

applications

 ProtectsoneI/Oorpowerline  Lowclampingvoltage  Workingvoltages:5Vand36V  Lowleakagecurrent  Solid-statesilicon-avalanchetechnology  Terminalsfinish:100%PureTin  “-A”isanAEC-Q101qualifieddevice SOD-323 TheSDxxCTVSdiodesaredesignedtoreplacemultilayervaristors(MLVs)inportableapplicationssuchascell phones,notebookcomputers,andPDA’s.Theyoffersuperiorelectricalcharacteristicssuchaslowerclamping voltageandnodevicedegradationwhencomparedtoMLVs.TheSDxxCseriesTVSdiodesaredesignedtoprotect sensitivesemiconductorcomponentsfromdamageorupsetduetoelectrostaticdischarge(ESD)andothervoltage inducedtransientevents. TheSDxxCisinaSOD-323packageandwillprotectoneunidirectionalline.ThesedeviceswillfitonthesamePCB padareaasan0805MLVdevice.Theygivethedesignertheflexibilitytoprotectonelineinapplicationswhere arrays arenotpractical.Additionally, itmaybe“sprinkled”aroundtheboardinapplicationswhereboardspaceis atapremium. TheymaybeusedtomeettheESDimmunityrequirementsofIEC61000-4-2,Level4(±15kVair,±8Kvcontact discharge).  CellPhoneHandsetsandAccessories  Microprocessorbasedequipment  PersonalDigitalAssistants(PDA’s)  Notebooks,Desktops,andServers  PortableInstrumentation  PagersPeripherals  SOD-323package  Moldingcompoundflammabilityrating:UL94V-0  Marking:Markingcode  Packaging:TapeandReel

DataSheetN2250,Rev.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD05CTHRUSD36C MaximumRatings@TA=25°Cunlessotherwisespecified Parameter Symbol Value Units PeakPulsePower(tp=8/20μs) PPK 350 W PeakPulseCurrent (tp=8/20μs) IPP 24 A ESDVoltage(HBMWaveform perIEC61000-4-2) VESD 30 KV LeadSolderingTemperature TL 260(10sec.) ℃ OperatingTemperature TJ -55to+125 ℃ StorageTemperature TSTG -55to+150 ℃ ElectricalCharacteristics@TA=25°Cunlessotherwisespecified SD05C Markingcode D05C Characteristics Symbol Condition Min. Typ. Max. Units ReverseStand-OffVoltage VRWM - - - 5 V ReverseBreakdownVoltage VBR @It=1mA 6 - - V ReverseLeakageCurrent IR @VRWM =5V,T=25℃ - - 10 μA ClampingVoltage VC @IPP =5A,tp=8/20μs - - 9.8 V ClampingVoltage VC @IPP =24A,tp=8/20μs - - 14.5 V JunctionCapacitance Cj @VR =0V,fSIG =1MHz - - 200 pF SD12C Markingcode D12C Characteristics Symbol Condition Min. Typ. Max. Units ReverseStand-OffVoltage VRWM - - - 12 V ReverseBreakdownVoltage VBR @It=1mA 13.3 - - V ReverseLeakageCurrent IR @VRWM =12V,T=25℃ - - 1 μA ClampingVoltage VC @IPP =5A,tp=8/20μs - - 19 V ClampingVoltage VC @IPP =15A,tp=8/20μs - - 24 V JunctionCapacitance Cj @VR =0V,fSIG =1MHz - - 100 pF SD15C Markingcode D15C Characteristics Symbol Condition Min. Typ. Max. Units ReverseStand-OffVoltage VRWM - - - 15 V ReverseBreakdownVoltage VBR @It=1mA 16.7 - - V ReverseLeakageCurrent IR @VRWM =15V,T=25℃ - - 1 μA ClampingVoltage VC @IPP =5A,tp=8/20μs - - 24 V ClampingVoltage VC @IPP =12A,tp=8/20μs - - 29 V JunctionCapacitance Cj @VR =0V,fSIG =1MHz - - 75 pF

DataSheetN2250,Rev.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD05CTHRUSD36C SD18C Markingcode D18C Characteristics Symbol Condition Min. Typ. Max. Units ReverseStand-OffVoltage VRWM - - - 18 V ReverseBreakdownVoltage VBR @It=1mA 20 - 24 V ReverseLeakageCurrent IR @VRWM =18V,T=25℃ - - 1 μA ClampingVoltage VC @IPP =1A,tp=8/20μs - - 29 V ClampingVoltage VC @IPP =9A,tp=8/20μs - - 40 V JunctionCapacitance Cj @VR =0V,fSIG =1MHz - - 60 pF SD24C Markingcode D24C Characteristics Symbol Condition Min. Typ. Max. Units ReverseStand-OffVoltage VRWM - - - 24 V ReverseBreakdownVoltage VBR @It=1mA 26.7 - - V ReverseLeakageCurrent IR @VRWM =24V,T=25℃ - - 1 μA ClampingVoltage VC @IPP =1A,tp=8/20μs - - 43 V ClampingVoltage VC @IPP =6A,tp=8/20μs - - 56 V JunctionCapacitance Cj @VR =0V,fSIG =1MHz - - 50 pF SD36C Markingcode D36C Characteristics Symbol Condition Min. Typ. Max. Units ReverseStand-OffVoltage VRWM - - - 36 V ReverseBreakdownVoltage VBR @It=1mA 40 - - V ReverseLeakageCurrent IR @VRWM =36V,T=25℃ - - 1 μA ClampingVoltage VC @IPP =1A,tp=8/20μs - - 52 V ClampingVoltage VC @IPP =4A,tp=8/20μs - - 62 V JunctionCapacitance Cj @VR =0V,fSIG =1MHz - - 30 pF

DataSheetN2250,Rev.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD05CTHRUSD36C Forinformationontapeandreelspecifications,includingpart orientationandtapesizes,pleaserefertoourtapeandreel packagingspecification. RatingsandCharacteristicsCurves OrderingInformation MarkingDiagram Device Package Shipping SD05C THRU SD36C SOD-323 (Pb-Free) 3000pcs/reel Markingcode=D05C

DataSheetN2250,Rev.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD05CTHRUSD36C MechanicalDimensionsSOD-323 SYMBOL Millimeters Inches MIN. MAX. MIN. MAX. A - 1.000 - 0.039 A1 0.000 0.100 0.000 0.004 A2 0.800 0.900 0.031 0.035 b 0.250 0.350 0.010 0.014 c 0.080 0.150 0.003 0.006 D 1.200 1.400 0.047 0.055 E 1.600 1.800 0.063 0.071 E1 2.500 2.700 0.098 0.106 L 0.475REF. 0.019REF. L1 0.250 0.400 0.010 0.016 θ 0° 8° 0° 8° CarrierTapeSpecificationSOD-323 SYMB OL Millimeters Min. Max. B 2.85 2.95 C 1.20 1.30 d 1.40 1.60 E 1.65 1.85 F 3.40 3.60 P 3.90 4.10 P0 3.90 4.10 P1 1.90 2.10 W 7.90 8.30

DataSheetN2250,Rev.C  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD05CTHRUSD36C DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..