SD15C-01FTG LITTELFUSE | Alldatasheet
Document overview
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- PDF pages: 7
Technical content
Features
- ESD, IEC 61000-4-2, ±30kV contact, ±30kV air
- EFT , IEC 61000-4-4, 40A (5/50ns)
- Lightning, IEC 61000- 4-5 2nd Edition, 30A (tP=8/20μs, SD05C)
- Low clamping voltage
- Low leakage current
- Small SOD323 package fits 0805 footprints
- AEC-Q101 qualified
- RoHS Compliant and Lead Free
- Moisture Sensitivity Level (MSL -1)
- Switches / Buttons
- Test Equipment / Instrumentation
- Point-of-Sale Terminals
- Medical Equipment
- Notebooks / Desktops / Servers
- Computer Peripherals
- Automotive Electronics Pinout and Functional Block Diagram Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. SD-C Series 450W Discrete Bidirectional TVS Diode RoHS Pb GREEN Additional Information Datasheet SamplesResources
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/27/16 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SD-C Series Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Absolute Maximum Ratings Symbol Parameter Value Units Ppk Peak Pulse Power (tp=8/20μs) 450 W TOP Operating Temperature -40 to 125 °C TSTOR Storage Temperature -55 to 150 °C Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 5.0 V Reverse Voltage Drop VR IR=1mA 6.0 V Leakage Current ILEAK VR=5V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 10.0 V IPP=10A, tP=8/20μs, Fwd 14.5 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to Ground 0.31 Ω Peak Pulse Current Ipp tp=8/20µs 30.0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CD Reverse Bias=0V , f=1MHz 200 pF Thermal Information Parameter Rating Units Storage Temperature Range -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 12.0 V Reverse Voltage Drop VR IR=1mA 13.3 V Leakage Current ILEAK VR=12V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 18.5 V IPP=10A, tP=8/20μs, Fwd 23.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to Ground 0.41 Ω Peak Pulse Current Ipp tp=8/20µs 1 7. 0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CD-GND Reverse Bias=0V , f=1MHz 100 pF
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/27/16 TVS Diode Arrays (SPA® Diodes) SD-C General Purpose ESD Protection - SD-C Series Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 15.0 V Reverse Voltage Drop VR IR=1mA 16.7 V Leakage Current ILEAK VR=15V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 24.0 V IPP=10A, tp=8/20µs, Fwd 31 .0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to Ground 0.46 Ω Peak Pulse Current Ipp tp=8/20µs 12.0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 75 pF Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 24.0 V Reverse Voltage Drop VR IR=1mA 26.7 V Leakage Current ILEAK VR=24V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 34.0 V IPP=5A, tp=8/20µs, Fwd 42.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to Ground 0.62 Ω Peak Pulse Current Ipp tp=8/20µs 7. 0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 50 pF Note: 1 . Parameter is guaranteed by design and/or device characterization. 2.Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage VRWM IR≤1μA 36.0 V Reverse Voltage Drop VR IR=1mA 40.0 V Leakage Current ILEAK VR=36V 1. 0 μA Clamp Voltage1 VC IPP=1A, tp=8/20µs, Fwd 50.0 V IPP=4A, tp=8/20µs, Fwd 60.0 V Dynamic Resistance2 RDYN TLP , tp=100ns, I/O to Ground 0.68 Ω Peak Pulse Current Ipp tp=8/20µs 5.0 A ESD Withstand Voltage1 VESD IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Diode Capacitance1 CI/O-GND Reverse Bias=0V , f=1MHz 30 pF
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/27/16 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SD-C Series 8/20 µs Pulse Waveform 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% 110% Time (/uni03BCs) Percent of IPP Power Derating Curve 100 110 02 55 07 51 00 1251 50 Ambient Temperature - TA (oC) % of Rated Power I PP Non-Repetitive Peak Pulse Power vs. Pulse Time Pulse Duration - tp (µs) Peak Pulse Power - P pk (kW) 0.01 0.1 0.11 10 100 1000 Capacitance vs. Bias 100 120 140 160 036 91 21 51 82 12 42 73 03 33 6 Capacitance (pF Bias Voltage (V SD05C SD12C SD15C SD24C SD36C SD05C T ransmission Line Pulsing(TLP) Plot 0246 81 01 21 41 61 8 TLP Voltage (V) TLP Current (A) SD12C T ransmission Line Pulsing(TLP) Plot 0246 81 01 21 41 61 82 02 22 42 6 TLP Voltage (V) TLP Current (A)
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/27/16 TVS Diode Arrays (SPA® Diodes) SD-C General Purpose ESD Protection - SD-C Series SD15C T ransmission Line Pulsing(TLP) Plot 0 2468 10 12 14 16 18 20 22 24 26 28 30 32 TLP Voltage (V) TLP Current (A) SD24C T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 35 40 45 50 TLP Voltage (V) TLP Current (A) SD36C T ransmission Line Pulsing(TLP) Plot 05 10 15 20 25 30 35 40 45 50 55 60 65 TLP Voltage (V) TLP Current (A) Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do Critical Zone TL to TP Critical Zone TL to TP Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Soldering Parameters
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/27/16 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SD-C Series Product Characteristics Lead Plating Matte Tin Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substrate material Silicon Body Material V-0 per UL 94 Molded Epoxy Notes : 1 . All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. Part Numbering SystemPart Marking System SD** 01 T G Voltage Number of Channels Package T= Tape & Reel G= Green TVS Diode Arrays (SPA Diodes F: SOD323 FC Bidirectional Blank: SD05C-01FTG 1: SD12C-01FTG 2: SD15C-01FTG 3: SD24C-01FTG 4: SD36C-01FTG
Ordering Information
Part Number Package Marking Min. Order Qty. SD05C-01FTG SOD323 G 3000 SD12C-01FTG SOD323 G1 3000 SD15C-01FTG SOD323 G2 3000 SD24C-01FTG SOD323 G3 3000 SD36C-01FTG SOD323 G4 3000 Symbol SOD323 Millimeters Inches Min Max Min Max A 0.8 1 .14 0.031 0.045 A1 0.00 0.10 0.000 0.004 A2 0.80 1 .04 0.031 0.014 b 0.25 0.35 0.010 0.014 c 0.08 0.15 0.003 0.006 D 1 .15 1 .45 0.045 0.057 E 1 .60 1 .90 0.063 0.075 E1 2.44 2.70 0.096 0.106 L1 0.25 0.45 0.010 0.018 E b c D A1 A2 A 0.2 0.49 0.45 2.28 1.14 2.77 1.79 Recommended Solder Pad Unit: mm
© 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/27/16 TVS Diode Arrays (SPA® Diodes) SD-C General Purpose ESD Protection - SD-C Series Embossed Carrier T ape & Reel Specification — SOD323 4.00 2.00 A A 4.00 B B ø1.50 1.753.50 8.00 1.25 Cover Tape 2.90 B-B 0.254 1.46 A-A ø178 12.3 9.5 12.3 54.4 R78.0 R25.6 R25.6 R6.5 3000 2500 2000 1500 1000 500