SD303C IRF | Alldatasheet

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High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics Low forward recovery Fast and soft reverse recovery Press-puk encapsulation Case style conform to JEDEC DO-200AA Maximum junction temperature 125°C Typical Applications Snubber diode for GTO High voltage free-wheeling diode Fast recovery rectifier applications Major Ratings and Characteristics IF(AV) 350 A @ T hs 55 °C IF(RMS) 550 A @ T hs 25 °C IFSM @ 50Hz 5770 A @ 60Hz 6040 A I2t @ 50Hz 166 KA 2s @ 60Hz 152 KA 2s VRRM range 400 to 2500 V trr range 1.0 to 2.0 µs @ T J 25 °C TJ - 40 to 125 °C Parameters SD303C..C Units case style DO-200AA

SD303C..C Series 2222222222222 D-656 Code (µs) (A) (A/µs) (V) (µs) (µC) (A) Test conditions Max. values @ TJ = 125 °C Recovery Characteristics typical trr Ipk di/dt Vr trr Q rr Irr @ 25% IRRM Square Pulse @ 25% IRRM TJ = 25 oC S10 1.0 2.4 52 33 S15 1.5 750 25 -30 2.9 90 44 S20 2.0 3.2 107 46 Voltage V RRM max. repetitive VRSM , maximum non- IRRM max. Type number Code peak and off-state voltagerepetitive peak voltageTJ = 125°C V V mA 04 400 500 SD303C..S10C 08 800 900 10 1000 1100 12 1200 1300 SD303C..S15C 14 1400 1500 16 1600 1700 20 2000 2100 25 2500 2600 ELECTRICAL SPECIFICATIONS Voltage Ratings SD303C..S20C Parameter SD303C..C Units Conditions IF(AV) Max. average forward current 350(175) A 180° conduction, half sine wave. @ Heatsink temperature 55(75) °C Double side (single side) cooled IF(RMS) Max. RMS current 550 A @ 25°C heatsink temperature double side cooled IFSM Max. peak, one-cycle 5770 t = 10ms No voltage non-repetitive forward current 6040 t = 8.3ms reapplied 4850 t = 10ms 100% V RRM 5080 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I2t for fusing 166 t = 10ms No voltage Initial TJ = TJ max. 152 t = 8.3ms reapplied 117 t = 10ms 100% V RRM 107 t = 8.3ms reapplied I2√t Maximum I2√t for fusing 1660 KA 2√s t = 0.1 to 10ms, no voltage reapplied V F(TO)1 Low level of threshold voltage 1.14 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. V F(TO) 2 High level of threshold voltage 1.63 (I > π x IF(AV)), TJ = TJ max. rf1 Low level of forward slope resistance1.14 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. rf2 High level of forward slope resistance 0.77 (I > π x IF(AV)), TJ = TJ max. V FM Max. forward voltage 2.26 V Ipk= 1100A, TJ = 25°C, tp = 10ms sinusoidal wave Forward Conduction KA 2s A m Ω V

SD303C..C Series D-659 Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 6 - Forward Power Loss CharacteristicsFig. 5 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled

SD303C..C Series D-660 Fig. 9 - Forward Voltage Drop Characteristics Fig. 10 - Thermal Impedance ZthJ-hs Characteristic Fig. 11 - Typical Forward Recovery Characteristics Fig. 12 - Recovery Time CharacteristicsFig. 13 - Recovery Charge CharacteristicsFig. 14 - Recovery Current Characteristics

SD303C..C Series D-661 Fig. 16 - Recovery Charge CharacteristicsFig. 15 - Recovery Time Characteristics Fig. 17 - Recovery Current Characteristics Fig. 18 - Recovery Time CharacteristicsFig. 19 - Recovery Charge CharacteristicsFig. 20 - Recovery Current Characteristics Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics

SD303C..C Series D-662 Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics

SD303C..C Series D-6573333 TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 R thJ-hs Max. thermal resistance, 0.16 DC operation single side cooled junction to heatsink 0.08 DC operation double side cooled F Mounting force, ± 10% 4900 N (500) (Kg) wt Approximate weight 70 g Case style DO-200AA See Outline Table Parameter SD303C..C Units Conditions Thermal and Mechanical Specifications ΔR thJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) K/W 1 - Diode 2 - Essential part number 3 - 3 = Fast recovery 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (see Voltage Ratings table) 6 - trr code (see Recovery Characteristics table) 7 - C = Puk Case DO-200AA Ordering Information Table 51 2 3 4 SD 30 3 C 25 S20 C Device Code Sinusoidal conductionRectangular conduction Conduction angle Units Conditions Single SideDouble Side Single SideDouble Side 180° 0.010 0.011 0.008 0.008 120° 0.012 0.013 0.013 0.013 60° 0.024 0.024 0.025 0.025 30° 0.042 0.042 0.042 0.042

SD303C..C Series 2222222222222 D-658 Outline Table Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Case Style DO-200AA All dimensions in millimeters (inches) 0.3 (0.01) MIN. BOTH ENDS 4 2 (1 .6 5 ) D IA . M A X . 38 (1.50) DIA. MAX. TWO PLACES 1.8 (0.07) DEEP MIN. BOTH ENDS 19(0.75) DIA. MAX. 1 4 .4 (0 .5 7 ) 1 3 .7 (0 .54 )