SD3-0650-S003AB SMCDIODE | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 3

Technical content

DataSheet D0205,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD3-0650-S003AB SD3-0650-S003AB SiCSchottkyPowerRectifierChip Parameter Symbol Value Units RepetitivePeakReverseVoltage VRRM 650 V SurgePeakReverseVoltage VRSM 650 V DCPeakBlockingVoltage VR 650 V MaximumDCCurrent* IF 3 A RepetitivePeakForwardSurgeCurrent IFRM 23 A PeakOneCycleNon-RepetitiveSurgeCurrent IFSM 46 A OperatingJunctionandStorageTemperature TJ ,Tstg -55to+175 ˚C

Description

PartNumber DieSize Anode Cathode SD3-0650-S003AB Pleasecontactyoursalesrepresentative togetthedetailedinformationaboutdie layoutanddimensions. Al Ag MaximumRatings:  650-VoltSchottkyRectifier  ZeroReverseRecovery  ZeroForwardRecovery  High-FrequencyOperation  Temperature-IndependentSwitchingBehavior  ExtremelyFastSwitching  PositiveTemperatureCoefficientonVF

DataSheet D0205,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD3-0650-S003AB * Pulsewidth<300µs, dutycycle<2% Parameter Typ. Unit DieSize 1.20*1.20 mm AnodePadopening 0.75*0.75 mm Thickness 350±25 μm AnodeMetalization(Al) 4 μm CathodeMetalization(Ag) 0.4 μm FrontsidePassivation Polyimide ElectricalCharacteristics(T=25℃ unlessotherwisespecified): Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop* VF1 @3A,Pulse,TJ =25C 1.4 1.7 V VF2 @3A,Pulse,TJ =175C 1.6 2.0 V ReverseCurrent* IR1 @VR =ratedVR,TJ =25C 0.03 2 uA IR2 @VR =ratedVR,TJ =175C 0.3 20 uA JunctionCapacitance CT VR=0V,TJ=25℃,f=1MHz 230 - pF ReverseRecoveryCharge Qc IF =3A,di/dt=200A/μs VR =400V,TJ =25°C 14.35 - nC Capacitance Stored Energy EC VR =400V,TJ =25°C 3.51 - μJ MechanicalParameters:

DataSheet D0205,REV.-  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD3-0650-S003AB ChipDimension symbol Dimension+/-10% A 1.20mm B 1.20mm C 0.75mm D 0.75mm H 350um DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionof thedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationoftheuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualproperty claimsoranyotherproblemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuse atavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations..