SD200SCU150A SMCDIODE | Alldatasheet

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DATA SHEET D0122 REV. –  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD200SCU150A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200C Operating Temperature Applications:  Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode Features:  Ultra low Reverse Leakage Current  Soft Reverse Recovery at Low and High Temperature  Very Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Capacity  Guard Ring for Enhanced Durability and Long Term Reliability  Guaranteed Reverse Avalanche Characteristics  Electrically / Mechanically Stable during and after Packaging  Out Performs 150 Volt Ultrafast Rectifiers Maximum Ratings: Characteristics Symbol Condition Max. Units PeakInverseVoltage VRWM - 150 V AverageForwardCurrent IF(AV) 50% duty cycle,rectangular waveform 60 A PeakOneCycleNon- RepetitiveSurgeCurrent IFSM 8.3ms,Sinepulse(1) 860 A JunctionTemperature TJ - -55to+200 C StorageTemperature Tstg - -55to+200 C Electrical Characteristics: Characteristics Symbol Condition Max. Units ForwardVoltageDrop VF1 @60A,Pulse,TJ =25C 0.92 V VF2 @60A,Pulse,TJ =125C 0.79 V ReverseCurrent IR1 @VR =150V,Pulse, TJ =25C 1.5 mA IR2 @VR =150V, Pulse, TJ =125 C 24 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz, VSIG =50mV(p-p) 1500 pF

DATA SHEET D0122 REV. –  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD200SCU150A Mechanical Dimensions: In Inches (mm) BottomsidemetalizationAg-5kAminimum TopsidemetalizationAl-25kAminimum Bottomsideiscathode,topsideisanode DimensionH=0.01050.001(0.270.026)(Itcanbe customizedaccordingtocustomerrequirements) H A B DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.. B A