SD200SCU150A SMCDIODE | Alldatasheet
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DATA SHEET D0122 REV. – China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com SD200SCU150A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Out Performs 150 Volt Ultrafast Rectifiers Maximum Ratings: Characteristics Symbol Condition Max. Units PeakInverseVoltage VRWM - 150 V AverageForwardCurrent IF(AV) 50% duty cycle,rectangular waveform 60 A PeakOneCycleNon- RepetitiveSurgeCurrent IFSM 8.3ms,Sinepulse(1) 860 A JunctionTemperature TJ - -55to+200 C StorageTemperature Tstg - -55to+200 C Electrical Characteristics: Characteristics Symbol Condition Max. Units ForwardVoltageDrop VF1 @60A,Pulse,TJ =25C 0.92 V VF2 @60A,Pulse,TJ =125C 0.79 V ReverseCurrent IR1 @VR =150V,Pulse, TJ =25C 1.5 mA IR2 @VR =150V, Pulse, TJ =125 C 24 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz, VSIG =50mV(p-p) 1500 pF
DATA SHEET D0122 REV. – China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com SD200SCU150A Mechanical Dimensions: In Inches (mm) BottomsidemetalizationAg-5kAminimum TopsidemetalizationAl-25kAminimum Bottomsideiscathode,topsideisanode DimensionH=0.01050.001(0.270.026)(Itcanbe customizedaccordingtocustomerrequirements) H A B DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.. B A