SD200SC100A1 SMCDIODE | Alldatasheet

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DATA SHEET D0027 REV. –  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD200SC100A1 SILICON SCHOTTKY RECTIFIER DIE Applications:  Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode Features:  Ultra low Reverse Leakage Current  Soft Reverse Recovery at Low and High Temperature  Very Low Forward Voltage Drop  Low Power Loss, High Efficiency  High Surge Capacity  Guard Ring for Enhanced Durability and Long Term Reliability  Guaranteed Reverse Avalanche Characteristics  Electrically / Mechanically Stable during and after Packaging Maximum Ratings: Characteristics Symbol Condition Max. Units PeakInverseVoltage VRWM - 100 V AverageForwardCurrent IF(AV) 50% duty cycle@TC=75°C, rectangularwaveform 60 A PeakOneCycleNon- RepetitiveSurgeCurrent IFSM 10ms,Sinepulse(1) 860 A JunctionTemperature TJ - -55to+200 C StorageTemperature Tstg - -55to+200 C Electrical Characteristics: Characteristics Symbol Condition Max. Units ForwardVoltageDrop VF1 @7.62mA,Pulse,TA =25C 0.41 V VF2 @60A,Pulse,TA =25C 0.87 V VF3 @60A,Pulse,TA =125C 0.72 V ReverseCurrent(perleg) * IR1 @VR =ratedVR TJ =25C 0.1 mA IR2 @VR =ratedVR TJ =125C 24 mA JunctionCapacitance (perleg) CT @VR =5V,TC =25C fSIG =100KHz -1MHz 1500 pF (1) inSHDpackage

DATA SHEET D0027 REV. –  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com SD200SC100A1 Mechanical Dimensions: In Inches （ mm ） BottomsidemetalizationNi-100010%nm Ag-20010%nm TopsidemetalizationAl-510%um Bottomsideiscathode,topsideisanode DimensionH=0.01050.001(0.270.026)(Itcanbe customizedaccordingtocustomerrequirements) H A B DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.. B A