SD200SA60B SMCDIODE | Alldatasheet
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DATA SHEET D0084 REV. – China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com SD200SA60B SILICON SCHOTTKY RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings: Characteristics Symbol Condition Max. Units PeakInverseVoltage VRWM - 60 V AverageForwardCurrent IF(AV) 50% duty cycle,rectangular waveform 60 A PeakOneCycleNon- RepetitiveSurgeCurrent IFSM 8.3ms,Sinepulse(1) 860 A JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C Electrical Characteristics: Characteristics Symbol Condition Max. Units ForwardVoltageDrop VF1 @ 60A,Pulse,TJ =25C 0.68 V VF2 @ 60A,Pulse,TJ =125C 0.64 V ReverseCurrent IR1 @VR =60V,Pulse, TJ =25C 6 mA IR2 @VR =60V,Pulse, TJ =125 C 420 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz, VSIG =50mV(p-p) 2400 pF (1) inSHDpackage
DATA SHEET D0084 REV. – China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com SD200SA60B Mechanical Dimensions: In Inches （ mm ） BottomsidemetalizationAg-5kAminimum TopsidemetalizationAg-25kAminimum Bottomsideiscathode,topsideisanode DimensionH=0.01550.0005(0.390.013)(Itcanbe customizedaccordingtocustomerrequirements) H A B DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.. B A