SD200SA30B SMCDIODE | Alldatasheet
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DATA SHEET D0096 REV. – China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com SD200SA30B SILICON SCHOTTKY RECTIFIER DIE Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings: Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeak ReverseVoltage DCBlockingVoltage VRRM VRWM VR - 30 V AverageForwardCurrent IF(AV) 50% duty cycle, rectangularwaveform 60 A PeakOneCycleNon-Repetitive SurgeCurrent IFSM 8.3ms,Sinepulse(1) 860 A JunctionTemperature TJ - -55to+150 C StorageTemperature Tstg - -55to+150 C Electrical Characteristics: Characteristics Symbol Condition Max. Units ForwardVoltageDrop VF1 @ 60A,Pulse,TJ =25C 0.53 V VF2 @ 60A,Pulse,TJ =125C 0.43 V ReverseCurrent IR1 @VR =30V,Pulse, TJ =25C 6 mA IR2 @VR =30V,Pulse, TJ =125 C 300 mA JunctionCapacitance CT @VR =5V,TC =25C fSIG =1MHz, VSIG =50mV(p-p) 3300 pF (1) inSHDpackage
DATA SHEET D0096 REV. – China - Germany - Korea - Singapore - UnitedStates http://www.smc-diodes.com - sales@smc-diodes.com SD200SA30B Mechanical Dimensions: In Inches （ mm ） BottomsidemetalizationAg-5kAminimum TopsidemetalizationAg-25kAminimum Bottomsideiscathode,topsideisanode DimensionH=0.01550.0005(0.390.013)(Itcanbe customizedaccordingtocustomerrequirements) H A B DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdsales departmentforthelatestversionofthedatasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanydamagesthatmayresultfromanaccidentor anyothercauseduringoperationoftheuser’sunitsaccordingtothedatasheet(s).SMC-SangdestMicroelectronics(Nanjing)Co.,Ltd assumesnoresponsibilityforanyintellectualpropertyclaimsoranyotherproblemsthatmayresultfromapplicationsofinformation, productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMC-SangdestMicroelectronics(Nanjing)Co.,Ltdbeliableforanyfailureinasemiconductordeviceorany secondarydamageresultingfromuseatavalueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)under anypatentsorotherrightsofanythirdpartyorSMC-SangdestMicroelectronics (Nanjing)Co.,Ltd. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC -SangdestMicroelectronics(Nanjing)Co.,Ltd. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwill hindermaintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythird party.Whenexportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsand regulations.. B A