SD200SA30A SENSITRON | Alldatasheet
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- 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
- World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SD200SA30A/B/C Technical Data Data Sheet 506, Rev.- SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop Applications:
- Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
- Soft Reverse Recovery at Low and High Temperature
- Very Low Forward Voltage Drop
- Low Power Loss, High Efficiency
- High Surge Capacity
- Guard Ring for Enhanced Durability and Long Term Reliability
- Guaranteed Reverse Avalanche Characteristics
- Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 30 V Max. Average Forward Current IF(AV) 50% duty cycle, rectangular wave form 60 A Max. Peak One Cycle Non- Repetitive Surge Current IFSM 8.3 ms, half Sine wave (1) 860 A Non-Repetitive Avalanche Energy EAS TJ = 25 °C, IAS = 12 A, L = 0.75 mH 54 mJ Repetitive Avalanche Current IAR IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR 12 A Max. Junction Temperature TJ - -65 to +150 °C Max. Storage Temperature Tstg - -65 to +150 °C Electrical Characteristics(1): Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop VF1 @ 60A, Pulse, TJ = 25 °C 0.53 V VF2 @ 60A, Pulse, TJ = 125 °C 0.43 V Max. Reverse Current IR1 @VR = 30V, Pulse, TJ = 25 °C 6 mA IR2 @VR = 30V, Pulse, TJ = 125 °C 300 mA Max. Junction Capacitance CT @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) 3300 pF (1) in SHD package
- 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
- World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SD200SA30A/B/C Data Sheet 506, Rev.- Mechanical Dimensions: In Inches / mm 0.200 ± 0.003 (5.08 ± 0.077) 0.191 ± 0.003 (4.85 ± 0.077) H Bottom side metalization Ag - 30 kÅ minimum. Top side metalization Al - 25 kÅ minimum or Ag - 30 kÅ minimum. Bottom side is cathode, top side is anode. Dimension H = 0.0105 ± 0.001 (0.27 ± 0.026) for Al top; Forward Voltage Drop - V F (V) 10-1 100 101 102 Instantaneous Forward Current - IF (A) Typical Forward Characteristics 125 °C 150 °C 25 °C 0 1 02 03 04 0 Reverse Voltage - VR (V) 10-2 10-1 100 101 102 103 Instantaneous Reverse Current - IR (mA) Typical Reverse Characteristics 25 °C 50 °C 75 °C 100 °C 125 °C 150 °C 01 0 2 0 3 0 4 0 Reverse Voltage - VR (V) 1800 2100 2400 2700 3000Junction Capacitance - CT (pF) Typical Junction Capacitance 25 °C
- 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
- World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.