SD200N IRF | Alldatasheet

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High voltage ratings up to 2400V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Typical Applications Converters Power supplies Machine tool controls High power drives Medium traction applications Major Ratings and Characteristics IF(AV) 200 A @ T C 110 °C IF(RMS) 314 A IFSM @ 50Hz 4700 A @ 60Hz 4920 A I2t@ 50Hz 110 KA 2s @ 60Hz 101 KA 2s V RRM range 400 to 2400 V TJ - 40 to 180 °C Parameters SD200N/R Units case style DO-205AC (DO-30) SD200N/R SERIES STANDARD RECOVERY DIODES Stud Version Bulletin I2080/A 200A

Voltage V RRM , maximum repetitive V RSM , maximum non- I RRM max. Type number Code peak reverse voltage repetitive peak rev. voltage @ T J = TJ max. VV m A 04 400 500 08 800 900 12 1200 1300 16 1600 1700 20 2000 2100 24 2400 2500 SD200N/R 15 I F(AV) Max. average forward current 200 A 180° conduction, half sine wave @ Case temperature 110 °C IF(AV) Max. average forward current 220 A 180° conduction, half sine wave @ Case temperature 100 °C I F(RMS) Max. RMS forward current 314 A DC @ 95°C case temperature IFSM Max. peak, one-cycle forward, 4700 t = 10ms No voltage non-repetitive surge current 4920 t = 8.3ms reapplied 3950 t = 10ms 100% V RRM 4140 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 110 t = 10ms No voltage Initial T J = TJ max. 101 t = 8.3ms reapplied 78 t = 10ms 100% V RRM 71 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 1100 KA 2√s t = 0.1 to 10ms, no voltage reapplied V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage rf1 Low level value of forward slope resistance rf2 High level value of forward slope resistance V FM Max. forward voltage drop 1.40 V I pk= 630A, TJ = TJ max, tp = 10ms sinusoidal wave Parameter SD200N/R Units Conditions Forward Conduction KA 2s A V m Ω 0.64 (I > π x IF(AV)),TJ = TJ max. 0.79 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max. 1.00 (I > π x IF(AV)),TJ = TJ max. 0.90 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.

TJ Max. junction operating temperature range-40 to 180 Tstg Max. storage temperature range -55 to 200 R thJC Max. thermal resistance, junction to case0.23 DC operation R thCS Max. thermal resistance, case to heatsink0.08 Mounting surface, smooth, flat and greased T Max. allowed mounting torque ±10% 14 Nm Not lubricated threads wt Approximate weight 120 g Case style DO-205AC(DO-30) See Outline Table Parameter SD200N/R Units Conditions Thermal and Mechanical Specifications K/W Δ R thJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) 180° 0.041 0.030 T J = TJ max. 120° 0.049 0.051 90° 0.063 0.068 60° 0.093 0.096 30° 0.156 0.157 Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions K/W Ordering Information Table SD 20 0 N 24 P B C 1 2 3 4 5 6 7 Device Code 1 - Diode 2 - Essential part number 3 - 0 = Standard recovery 4 - N = Stud Normal Polarity (Cathode to Stud) R = Stud Reverse Polarity (Anode to Stud) 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A M = Stud base DO-205AC (DO-30) M12 X 1.75 7 - B = Flag top terminal (for Cathode/ Anode Leads) S = Isolated lead with silicone sleeve (Red = Reverse Polarity; Blue = Normal Polarity) None = Non isolated lead 8 - C = Ceramic Housing (over 1600V) V = Glass-metal seal (only up to 1600V)

Conforms to JEDEC DO-205AC (DO-30) All dimensions in millimeters (inches) GLASS-METAL SEAL MAX. 21 (0.82) MAX. 16.5 (0.65) 6.5 (0.26) MIN. DIA. 8.5 (0.33) NOM. 157 (6.18) 55 (2.16) MIN. MAX. SW 27 * FOR METRIC DEVICE: M12 X 1.75 170 (6.69) 1/2"-20UNF-2A* 12.5 (0.49) MAX. C.S. 16mm 2.6 (0.10) MAX 35 (1.38) MAX. (0.015 s.i.) CERAMIC HOUSING MAX. 21 (0.82) MAX. 16.5 (0.65) 6.5 (0 .26) MIN. DIA. 8.5 (0.33) NOM. 55 (2.16) MIN. DIA. 22.5 (0.88) MAX. 29 (1.14) MAX. SW 27 * FOR METRIC DEVICE: M12 X 1.75 157 (6.18) 170 (6.69) 1/2"-20UNF-2A* 12.5 (0.49) MAX. C.S. 16mm 2.6 (0.10) MAX 35 (1.38) MA X. (0.015 s.i.)

DO-205AC (DO-30) Flag All dimensions in millimeters (inches) MAX. GLASS-METAL SEAL MAX. 21 (0.82) MAX. 12.5 (0.49) 16.5 (0.65) 5.6 (0.22) DIA. 5.54 (0.22) 2.4 (0.09) 27 (1.06) 41 (1.61) MAX. 9.5 (0.37) *FOR METRIC DEVICE. M12 X 1.75 36.5 (1.44) 1/2"-20UNF-2A* CERAMIC HOUSING MAX. 21 (0.82) MAX. MAX. 12 .5 (0.49 ) 16.5 (0.65) 5.6 (0.22) DIA. 5.54 (0.22) 2.4 (0.09) 27 (1.06) 40.5 (1 .5 9) MAX. 1/2"-20UNF-2A* *FOR METRIC DEVICE. M12 X 1.75 9.5 (0.37) 45 (1.77)

Fig. 3 - Forward Power Loss Characteristics Fig. 2 - Current Ratings Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 1 - Current Ratings Characteristics 100 110 120 130 140 150 160 170 180 0 50 100 150 200 250 300 350 DC30° 60° 90° 120° 180° Conduction P eriod Maximum Allowabl e Cas e T emperature (°C) Average F orward Current (A) SD200N/ R Series R (DC) = 0.23 K / WthJC 100 110 120 130 140 150 160 170 180 0 40 80 120 160 200 240 30° 60° 90°120° 180° Average F orward Current (A) Conduction Angle Maximum Allowable Cas e T emperature (°C) SD200N/ R Series R (DC) = 0.23 K / WthJC 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.08 K/W - Delta R thSA

0.3 K/W

0.4 K/W

0.2 K/W

0.12 K/W

1.4 K/W

1.8 K/W

0.6 K/W

0.8 K/W

0 50 100 150 200 250 300 350 DC 180° 120° 90° 60° 30° RMS Li m i t Conduction P eriod Maximum Average F orward P ower L os s (W ) Average F orward Current (A) S D200N/ R S eries T = 180°C J 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient T emperature (°C) R = 0.08 K/W - Delta R thSA 100 150 200 250 300 0 50 100 150 200 250 180° 120° 90° 60° 30° RM S Lim it Conduction Angle Maximum Average Forward P ower Los s (W) Average F orward Current (A) SD 2 0 0N / R Se r i e s T = 180°CJ

Fig. 8 - Thermal Impedance ZthJC Characteristic Fig. 7 - Forward Voltage Drop Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 T = 25 ° CJ Ins tantaneous F orward Voltage (V) Ins tantaneous F orward Current (A) SD 2 0 0N / R Se r i e s T = 180°CJ 1000 1500 2000 2500 3000 3500 4000 4500 11 0 1 0 0 Number Of E qual Amplitude Half Cycle Current Puls es (N) P eak H alf S ine W ave F orward Current (A) Init ial T = 180°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J S D200N/R S eries At Any R ated L oad Condition And With R ated V Applied F ollowing S urge.RRM 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.01 0.1 1 Puls e T rain Duration (s ) P eak H alf S ine Wave F orward Current (A) Initial T = 180°C No Voltage R eapplied R ated V R eappliedRRM Versus Pulse Train Duration. Maximum Non R epetitive S urge Current J S D200N/ R S eries 0.01 0.1 0.001 0.01 0.1 1 10 Square Wave Puls e Duration (s ) thJCTrans ient Thermal Impedance Z (K/W) S teady State V al ue: R = 0.23 K / W (DC Operation) thJC SD200N/ R Serie s