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Dim. A B C D E F G H J K L M N Q Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 0.230 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Dimensions TO-220AC SD2001 SD2002 SD2004 SD2008 SD2010 SD2012 SD2016 100 200 400 800 1000 1200 1600 100 200 400 800 1000 1200 1600 Sirectifier VRSM V VRRM V A=Anode, C=Cathode, TAB=Cathode CAC(TAB) C A Discrete Diodes Symbol Test Conditions Maximum Ratings Unit TVJ=45oC; t=10ms (50Hz), sine VR =0V; t=8.3ms (60Hz), sine TVJ=150oC; t=10ms(50Hz), sine VR =0V; t=8.3ms(60Hz), sine 250 275 225 270 AIFSM TVJ=45oC; t=10ms (50Hz), sine VR =0V; t=8.3ms (60Hz), sine TVJ=150oC; t=10ms(50Hz), sine VR =0V; t=8.3ms(60Hz), sine 330 360 300 320 A2sI2t TVJ TVJM Tstg -40...+150 150 -40...+150 oC Weight 2 g IF(AV)M TC=95oC; 180o sine 20 A Symbol Test Conditions Characteristic Values Unit rT TVJ=TVJM 13 RthJC DC current 1.25 K/W m IR TVJ=TVJM; VR=VRRM < 1 mA VF IF=30A; TVJ=25oC < 1.25 V VTO For power-loss calculations only 0.85 V 7 $ % ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com

0.001 0.01 0.1 1 100 150 200 250 2 3 4 5 6 7 8 91 10 102 103 0 10 20 30 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I tIFSM IF A VF t s t ms Ptot W Id(AV)M A Tamb t s K/W A s 0 20 40 60 80 100 120 140 IF(AV)M TC A V A °C °C TVJ = 45°C 50Hz, 80% VRRM VR = 0 V Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I 2t versus time per diode Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 ° Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case RthHA :

1 K/W

2 K/W

3 K/W

5 K/W

7 K/W

10 K/W

15 K/W

TVJ = 150°C TVJ=150°C TVJ= 25°C TVJ = 150°C ZthJC TVJ = 45°C Constants for ZthJC calculation: i R thi (K/W) t i (s) 1 0.01362 0.0001 2 0.1962 0.00316 3 0.267 0.023 4 0.3052 0.4 5 0.218 0.15 0.001 0.01 0.1 1 100 150 200 250 2 3 4 5 6 7 8 91 10 102 103 0 10 20 30 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I tIFSM IF A VF t s t ms Ptot W Id(AV)M A Tamb t s K/W A s 0 20 40 60 80 100 120 140 IF(AV)M TC A V A °C °C TVJ = 45°C 50Hz, 80% VRRM VR = 0 V Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I 2t versus time per diode Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 ° Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case RthHA : TVJ = 150°C TVJ=150°C TVJ= 25°C TVJ = 150°C ZthJC TVJ = 45°C Constants for ZthJC calculation: i R thi (K/W) t i (s) 1 0.01362 0.0001 2 0.1962 0.00316 3 0.267 0.023 4 0.3052 0.4 5 0.218 0.15 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com