SD060-11-41-211 ADVANCEDPHOTONIX | Alldatasheet

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Technical content

Advanced Photonix, Inc. FEATURES DESCRIPTION APPLICATIONS

  • Low noise
  • Low dark current
  • High response SYMBOL PARAMETER MIN MAX UNITS VBR Reverse Voltage 75 V TSTG Storage Temperature -55 +100 °C TO Operating Temperature -40 +85 °C TS Soldering Temperature* +260 °C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID Dark Current VR = 5V 10 50 nA RSH Shunt Resistance VR = 10 mV 2 6 MW CJ Junction Capacitance V R = 5V, f = 1 MHz 250 450 pF lrange Spectral Application Range Spot Scan 800 1700 nm R Responsivity l= 1310nm, VR = 5V 0.83 0.92 A/W VBR Breakdown Voltage I = 1μA 18 V NEP Noise Equivalent Power VR = 5V @ l=1310nm 1.79X10 -14 W/ √ Hz tr Response Time** RL = 50 Ω,VR = 5V 10 nS SPECTRAL RESPONSE 0.2 0.4 0.6 0.8 1.2 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nM) Responsivity (A/W) InGaAs Photodetectors SD 060-11-41-211 The SD 060-11-41-211 is a InGaAs photodiode with high sensitivity and low noise characteristics packaged in a three leaded hermetic TO-39 metal package.
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  • Medical * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED **Response time of 10% to 90% is specified at 1310nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. © 2007 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 6/19/07 ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] TO-39 PACKAGE 0.079 [2.02] 0.079 [2.02] Ø.060 [1.5] ACTIVE AREA Ø0.360 [9.14] Ø0.325 [8.25] 113° 0.075 [1.90] 3X Ø0.018 [0.5]

1 ANODE

2 CASE GROUND

3 CATHODE

Ø0.240 [6.10] Ø0.200 [Ø5.08] PIN CIRCLE BOTTOM VIEW