SD05H SEMITECH | Alldatasheet
Document overview
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Technical content
Features
z Unidirectional Configurations z Peak Power Dissipation 800W @8 x 20 us Pulse z Low Leakage z Fast Response Time < 1 ns z Protects One Power or I/O Port z ESD Protection to IEC 61000-4-2 Level 4,15KV(Air), 8KV(Contanct) z ESD Protection to IEC 61000-4-2 Level 4, 30A z 16KV Human Body Model ESD Requirements z RoHS Compliant in Lead-Free Versions
Applications
z Cell Phone Handsets and Accessories z Microprocessor Based Equiment z Personal Digital Assistant (PDA) z Notebooks, Destops, and Servers z Portable Instrumentation z Pagers Periherals Absolute Maximum Ratings Parameter Symbol Value Units Peak Power Dissipation (Note 1.) @TL = 25°C PPK 800 W IEC 61000-4-2 (ESD) Air C O N T A C T ±15 ±8.0 KV KV IEC 61000-4-4 (EFT) 30 A ESD Voltage Per Human Body Model VPP 16 KV Storage Temperature Range TSTG -55 to 150 °C Operating Junction Temperature Range TJ -55 to 150 °C 1. 8 X 20 us, non–repetitive WWW.SEMITECH.CN
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter Maximum Reverse Peak Pulse Current IPP VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT IF Forward Current VF Forward Voltage @ IF Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VRWM (V) IR(uA) @ VRWM VBR (V)@ IT (Note 1) IT VC (V) @ IPP=5 A* VC (V) @ Max IPP* IPP (A)* C@OV 1MHz (pF) Device Max Max Min Max mA Typ Max Max Typ *Surge current waveform per Figure 1. 1. V BR is measured with a pluse test current IT at an ambient temperature of 25℃． Fig1. Pulse Waveform Fig2. Power Derating WWW.SEMITECH.CN
Fig3. Clamping Voltage Fig4. Forward Voltage vs. Peak Pulse Curre nt vs.Forward Current Fig5.Capacitance vs. Revere Voltage WWW.SEMITECH.CN
Millimeters Inches Dim MIN NOM MAX MIN NOM MAX A3 0.15 REF 0.006 REF L 0.08 0.003 WWW.SEMITECH.CN