SD05C THINKISEMI | Alldatasheet
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Technical content
350W Discrete Bi-directional Surface Mount TVS Diode for ESD SD05C thru SD24C © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.08T SOD-323 Bend Lead -Protects one I/O or power line - Moisture sensitivity level (MSL): 1 - Surface Mounted Device
FEATURES
-Working voltage:5V,12V,15V,24V MECHANICAL DATA - Case: Bend lead SOD-323 package - High temperature soldering guaranteed: 260°C/10s - Weight: 4.5mg (approximately) - Part no marking with code -Cell Phone Handsets and Accessories APPLICATION SOD-323(SMD) ELECTRICAL SYMBOL -Microprocessor based equipment -Portable Instrumentation MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak pulse power(t p =8/20μs) P pk 350 W Peak pulse current(t p =8/20μs) I PP 24 A ESD voltage(HBM waveform per IEC 6100-4-2) V PP 30 kV Lead soldering temperature T L 260 (10 sec.) ℃ Operating temperature T j -55 to+125 ℃ Storage temperature T STG -55 to+150 ℃ PIN Configuration
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5Rev.08T
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified SD05C TVS for 5V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage V RWM 5 V Reverse breakdown voltage V (BR)R
6 V I
R =1mA Clamping voltage V C 9.8 14.5 V I PP =5A,t p =8/20μs I PP =24A,t p =8/20μs Reverse leakage current I R 1 0 μA V RWM =5V Junction Capacitance C J 200 pF V R =0V,f=1MHz SD12C TVS for 12V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage V RWM 1 2 V Reverse breakdown voltage V (BR)R
13.3 V I
R =1mA Clamping voltage V C V I PP =5A,t p =8/20μs I PP =15A,t p =8/20μs Reverse leakage current I R 1 μA V RWM =12V Junction Capacitance C J 100 pF V R =0V,f=1MHz
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/5Rev.08T SD15C TVS for 15V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage V RWM 1 5 V Reverse breakdown voltage V (BR)R
16.7 V I
R =1mA Clamping voltage V C V I PP =5A,t p =8/20μs I PP =12A,t p =8/20μs Reverse leakage current I R 1 μA V RWM =15V Junction Capacitance C J 75 pF V R =0V,f=1MHz SD24C TVS for 24V Lines Parameter Symbol Min. Typ. Max. Unit Conditions Reverse stand-off voltage V RWM 2 4 V Reverse breakdown voltage V (BR)R
26.7 V I
R =1mA Clamping voltage V C V I PP =5A,t p =8/20μs I PP =8A,t p =8/20μs Reverse leakage current I R 1 μA V RWM =24V Junction Capacitance C J 50 pF V R =0V,f=1MHz
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/5Rev.08T TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
PACKAGE OUTLINE DIMENSIONS Min Max Min Max A 1.15 1.40 0.045 0.055 B 2.30 2.70 0.091 0.106 C 0.25 0.45 0.010 0.018 D 1.60 1.80 0.063 0.071 E 0.80 1.00 0.031 0.039 F 0.05 0.17 0.002 0.007 G H - 0.10 - 0.004 SUGGESTED PAD LAYOUT A B C D DIM. Unit (mm) Unit (inch) SOD-323 BEND LEAD 0.83 0.033 2.86 0.113 1.60 0.063 0.63 0.475 REF 0.19 REF DIM. Unit (mm) Unit (inch) Typ. Typ. 0.025 SD05C thru SD24C © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.08T